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  • 1
    Publication Date: 2016-06-21
    Description: Microwave resonator-driven microplasmas are a promising technology for generating the high density of rare-gas metastable states required for optically pumped rare gas laser systems. We measure the density of argon 1s 5 states (Paschen notation) in argon-helium plasmas between 100 Torr and atmospheric pressure using diode laser absorption. The metastable state density is observed to rise with helium mole fraction at lower pressures but to instead fall slightly when tested near atmospheric pressure. A 0-D model of the discharge suggests that these distinct behaviors result from the discharge being diffusion-controlled at lower pressures, but with losses occurring primarily through dissociative recombination at high pressures. In all cases, the argon metastable density falls sharply when the neutral argon gas fraction is reduced below approximately 2%.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 2
    Publication Date: 2015-05-20
    Description: Monitoring of the intrinsic temperature and the thermal management is discussed for the carbon nanotube nano-circuits. The experimental results concerning fabricating and testing of a thermometer able to monitor the intrinsic temperature on nanoscale are reported. We also suggest a model which describes a bi-metal multilayer system able to filter the heat flow, based on separating the electron and phonon components one from another. The bi-metal multilayer structure minimizes the phonon component of the heat flow, while retaining the electronic part. The method allows one to improve the overall performance of the electronic nano-circuits due to minimizing the energy dissipation.
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  • 3
    Publication Date: 2015-06-27
    Description: Reactive multilayer foils have the potential to be used as local high intensity heat sources for a variety of applications. Most of the past research effort concerning these materials have focused on understanding the structure-property relationships of the foils that govern the energy released during a reaction. To improve the ability of researchers to more rapidly develop technologies based on reactive multilayer foils, a deeper and more predictive understanding of the relationship between the heat released from the foil and microstructural evolution in the neighboring materials is needed. This work describes the development of a numerical model for the purpose of predicting heat affected zone size in substrate materials. The model is experimentally validated using a commercially available Ni-Al multilayer foils and alloys from the Sn-Bi binary system. To accomplish this, phenomenological models for predicting the variation of physical properties (i.e., thermal conductivity, density, and heat capacity) with temperature and composition in the Sn-Bi system were utilized using literature data.
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  • 4
    Publication Date: 2015-02-12
    Description: A high frequency (88 MHz) traveling strain wave on a piezoelectric substrate is shown to change the magnetization direction in 40  μ m wide Co bars with an aspect ratio of 10 3 . The rapidly alternating strain wave rotates the magnetization away from the long axis into the short axis direction, via magnetoelastic coupling. Strain-induced magnetization changes have previously been demonstrated in ferroelectric/ferromagnetic heterostructures, with excellent fidelity between the ferromagnet and the ferroelectric domains, but these experiments were limited to essentially dc frequencies. Both magneto-optical Kerr effect and polarized neutron reflectivity confirm that the traveling strain wave does rotate the magnetization away from the long axis direction and both yield quantitatively similar values for the rotated magnetization. An investigation of the behavior of short axis magnetization with increasing strain wave amplitude on a series of samples with variable edge roughness suggests that the magnetization reorientation that is seen proceeds solely via coherent rotation. Polarized neutron reflectivity data provide direct experimental evidence for this model. This is consistent with expectations that domain wall motion cannot track the rapidly varying strain.
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  • 5
    Publication Date: 2014-11-27
    Description: Magnetically-driven, planar shockless-compression experiments to multi-megabar pressures were performed on tantalum samples using a stripline target geometry. Free-surface velocity waveforms were measured in 15 cases; nine of these in a dual-sample configuration with two samples of different thicknesses on opposing electrodes, and six in a single-sample configuration with a bare electrode opposite the sample. Details are given on the application of inverse Lagrangian analysis (ILA) to these data, including potential sources of error. The most significant source of systematic error, particularly for single-sample experiments, was found to arise from the pulse-shape dependent free-surface reflected wave interactions with the deviatoric-stress response of tantalum. This could cause local, possibly temporary, unloading of material from a ramp compressed state, and thus multi-value response in wave speed that invalidates the free-surface to in-material velocity mapping step of ILA. By averaging all 15 data sets, a final result for the principal quasi-isentrope of tantalum in stress-strain was obtained to a peak longitudinal stress of 330 GPa with conservative uncertainty bounds of ±4.5% in stress. The result agrees well with a tabular equation of state developed at Los Alamos National Laboratory.
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  • 6
    Publication Date: 2014-08-21
    Description: Detection of surface charges has various applications in medicine, electronics, biotechnology, etc. The source of surface charge induction may range from simple charge-polarized molecules like water to complicated proteins. It was recently discovered that surface charge accumulation can alter the temperature at which VO 2 undergoes a Mott transition. Here, we deposited polar molecules onto the surface of two-terminal thin-film VO 2 lateral devices and monitored the joule-heating-driven Mott transition, or conductance switching. We observed that the power required to induce the conductance switching reduced upon treatment with polar molecules and, using in-situ blackbody-emission direct measurement of local temperature, we show that this reduction in power was accompanied by reduction in the Mott transition temperature. Further evidence suggested that this effect has specificity to the nature of the species used to induce surface charges. Using x-ray absorption spectroscopy, we also show that there is no detectable change in oxidation state of vanadium or structural phase in the bulk of the 40 nm VO 2 thin-film even as the phase transition temperature is reduced by up to 20 K by the polar molecules. The ability to alter the phase transition parameters by depositing polar molecules suggests a potential application in sensing surface charges of different origins and this set of results also highlights interesting aspects of the phase transition in VO 2 .
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  • 7
    Publication Date: 2016-10-27
    Description: Single crystal lithium fluoride (LiF), oriented [100], was shock loaded and subsequently shocklessly compressed in two experiments at the Z Machine. Velocimetry measurements were employed to obtain an impactor velocity, shock transit times, and in-situ particle velocities for LiF samples up to ∼1.8 mm thick. A dual thickness Lagrangian analysis was performed on the in-situ velocimetry data to obtain the mechanical response along the loading path of these experiments. An elastic response was observed on one experiment during initial shockless compression from 100 GPa before yielding. The relatively large thickness differences utilized for the dual sample analyses (up to ∼1.8 mm) combined with a relative timing accuracy of ∼0.2 ns resulted in an uncertainty of less than 1% on density and stress at ∼200 GPa peak loading on one experiment and
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  • 8
    Publication Date: 2016-10-27
    Description: An understanding of the mechanical and optical properties of lithium fluoride (LiF) is essential to its use as a transparent tamper and window for dynamic materials experiments. In order to improve models for this material, we applied iterative Lagrangian analysis to ten independent sets of data from magnetically driven planar shockless compression experiments on single crystal [100] LiF to pressures as high as 350 GPa. We found that the compression response disagreed with a prevalent tabular equation of state for LiF that is commonly used to interpret shockless compression experiments. We also present complementary data from ab initio calculations performed using the diffusion quantum Monte Carlo method. The agreement between these two data sets lends confidence to our interpretation. In order to aid in future experimental analysis, we have modified the tabular equation of state to match the new data. We have also extended knowledge of the optical properties of LiF via shock-compression and shockless compression experiments, refining the transmissibility limit, measuring the refractive index to ∼300 GPa, and confirming the nonlinear dependence of the refractive index on density. We present a new model for the refractive index of LiF that includes temperature dependence and describe a procedure for correcting apparent velocity to true velocity for dynamic compression experiments.
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  • 9
    Publication Date: 2015-07-29
    Description: To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600–1050 °C) and Al pre-exposures (1–15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be −3.5 ± 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 ± 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be −2.7 ± 0.3 and −0.4 ± 0.3 eV, respectively.
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  • 10
    Publication Date: 2016-01-13
    Description: CrAlN/Si 3 N 4 nanocomposite coatings with different Si contents were deposited to understand how Si influences the microstructure and mechanical behaviour of the coatings, in particular, the fracture toughness. The coating composition, chemical bonding, microstructure, and mechanical properties were studied by energy dispersive spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and nanoindentation, respectively. Using a micro double cantilever beam sample, it was found that the fracture toughness of CrAlN/Si 3 N 4 coatings was higher than that of both the CrN and CrAlN coatings and increased with increasing Si content. Cross-sectional transmission electron microscopy suggested that this was caused by the suppression of cracking at columnar boundaries.
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