ISSN:
1436-5073
Keywords:
Key words: Analytical electron microscopy; Monte Carlo simulation; cross-sectioned samples; silicon-germanium alloys.RID=""ID=""〈E5〉Acknowledgements.〈/E5〉 The authors are indebted to A. Parisini for the PEELS analyses and to A. Garulli and A. Bartolucci-Ponti for their helpful technical assistance.
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract. A novel approach to the quantitative analysis of thinned samples, which exploits the finite and variable width of the incident beam of an analytical electron microscope (AEM), is reported. For a binary alloy AB, the method requires two measurements of the I(AKα)/I(BKα) X-ray intensity ratios, obtained with two different beam diameters. The digital image of the beam is also recorded by a slow-scan CCD camera; its pixel intensities are converted into probability densities by our Monte Carlo code, which has been modified to simulate the electron trajectories crossing the vertical boundaries of the sample. The result of the simulation consists of two thickness t vs concentration C matrices for the two different spot sizes; the unique t-C combination, corresponding to the analyzed region, is obtained through the convergence routine described in our previous papers. This method has been applied to the analysis of Si-Ge alloys in AEM cross sections of Si/Si1−xGex/Si heterostructures. The Ge concentrations obtained by this method on samples of different composition and thickness are in agreement with those deduced from other experimental techniques.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s006040050014
Permalink
