ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1858-1860 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of pseudomorphic, trigonal structured HoF3 insulating layers, stable at room temperature, on the Si(111) surface. Normally the tysonite structure is only stable at temperatures above 1070 °C [R. E. Thoma and G. D. Brunton, Sov. Phys. Crystallogr. 18, 473 (1966)]. A phase transition to the lower-temperature orthorhombic structure is observed for a thickness of around 12 A(ring), consistent with the relaxation of elastic strain in the insulating layer.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5105-5108 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity measurements were made on Si(001) crystals containing a delta-doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1080-1082 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the atomic H etching of 6H-SiC substrates and the initial stages of GaN/6H-SiC molecular-beam epitaxy growth. Atomic H etched 6H-SiC(0001)Si and (0001¯)C surfaces show a ((square root of 3)×(square root of 3))−R30° and a (1×1) reconstruction respectively, with 0.7±0.2 monolayers of remnant O on both surfaces. GaN/6H-SiC(0001)Si growth is initiated by the formation of islands that develop into flat-top terraces through coalescence. Growth steps of one or integer numbers of the GaN atomic bilayer height are observed. GaN grown on 6H-SiC(0001¯)C is rougher with islands of irregular shape. X-ray photoemission spectroscopy studies show that Si 2p and C 1s photoelectron inelastic mean free paths in GaN are 22±1 and 20±1 Å, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 20 (1987), S. 330-337 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The basic equations are derived for the calculation of the angle settings of a five-circle diffractometer used for surface X-ray diffraction. This is done for a specified angle of incidence. An additional constraint that may be imposed is the horizontal alignment of the diffraction rods to match the divergence of the synchrotron X-ray source or the horizontal setting of the physical surface normal. Alignment procedures and the derivation of the orientation matrix are discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Measurements of the effect of hydrostatic pressure on ultrasonic wave velocities have been used to determine the pressure derivatives of the elastic stiffness of uranium nitride at room temperature.∂C 44/∂P, and hence the Grüneisen parameter for the transverse mode propagating down an 〈001〉 axis, is negative; however, this mode softening is not anomalous for rocksalt structure crystals. The Grüneisen gammas of the acoustic modes obtained in the long wavelength limit have a pronounced anisotropy which accrues largely from the presence or absence of contributions to modes of vibration from nearest-neighbour repulsive forces. The compression of uranium nitride calculated from the Murnaghan equation of state is much smaller than those of the alkali halides or IV–VI compounds because this compound is much stiffer.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract To examine the effects of vibrational anharmonicity on the long-wavelength phonon dynamics of a series of phosphate glasses, hydrostatic pressure and temperature dependences of ultrasonic wave velocities Ave been measured in molybdenum phosphate glasses (MoO3 x (P2O5)1-x over the composition range 35 to 76 mol % MoO3. Marked discontinuities occur in the variations of elastic constants with composition, indicating distinct differences in the nature of the structure and bonding in the glasses as a function of composition. The pressure derivatives of the elastic constants are found to be positive and the temperature derivatives negative. Both the longitudinal (γL) and shear (γS) mode Grüneisen parameters are positive, showing that application of hydrostatic pressure produces an increase in the long-wavelength acoustic phonon mode frequencies. The temperature dependences of both longitudinal and shear acoustic phonon velocities are found to be markedly anomalous in that they continue to increase substantially as the temperature is reduced below about 100 K. The low-temperature elastic constant data are compatible with the interaction of the phonons with two-level systems, and provide direct evidence for such systems in phosphate glasses.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...