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  • Articles  (139)
  • Articles: DFG German National Licenses  (139)
  • American Institute of Physics (AIP)  (139)
  • Molecular Diversity Preservation International
  • 1
    Electronic Resource
    Electronic Resource
    600-nm wavelength range GaInP/AlInP quasi-quaternary compounds and lasers prepared by gas-source molecular-beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 819-824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInP/AlInP quasi-quaternary (QQ) compounds grown by gas-source molecular-beam epitaxy were systematically investigated. Quasi-quaternary properties were obtained with GaInP/AlInP short-period superlattices when the thickness of the AlInP layers was less than 3 ML. Equivalent band-gap values of QQ compounds were defined in terms of the layer thickness ratios of the GaInP and AlInP layers. Using GaInP/AlInP quasi-quaternary compounds, 607–640-nm wavelength QQ lasers with 20-nm QQ active layers were fabricated. Threshold current densities as low as 1.5 kA/cm2 were attained for QQ lasers emitting at 635 nm without the presence of strain or quantum-well effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354872
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  • 2
    Electronic Resource
    Electronic Resource
    Pulsed nuclear magnetic resonance of 59Co in Co3S4 : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4618-4620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nuclear magnetic resonance of 59Co in Co3S4, which had been considered to be a simple Pauli paramagnet, has been reinvestigated by a pulsed method. Free-induction decay or spin-echo signals from A and B sites in the spinel structure have been observed. The signal from the magnetic A site shows a temperature-dependent Knight shift, and disappears suddenly at 58 K with decreasing temperature, suggesting the onset of a magnetically ordered state. The hyperfine coupling constant is roughly estimated to be −10 kOe/μB from the K-χ plot. The signal from the nonmagnetic B site, which shows a textbooklike quadrupolar powder pattern, is strong at low temperatures but the effect of the magnetic A site on the B site was not detected. The nuclear spin-lattice relaxation shows the Korringa-type behavior with (T1T)−1=13±2(s K)−1 for 59Co at the A site.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348331
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  • 3
    Electronic Resource
    Electronic Resource
    Pressure effect on magnetic transition temperature and magnetic phase diagram of Mn2−xCoxSb : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4642-4644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure effects on spin-flop transition temperature (Tsf) of Mn2−xCoxSb have been measured in order to study the nature of spin-flop phase transitions. The magnetic phase diagrams for Tsf versus concentration and for Tsf versus pressure have been determined. Tsf increases with increasing applied pressure (dTsf/dp=2.9 K/kbar for x=0.05, dTsf/dp=3.7 K/kbar for x=0.10, dTsf/dp=3.3 K/kbar for x=0.15, and dTsf/dp=2.7 K/kbar for x=0.20). On the other hand, Tsf decreases slowly with x up to (approximately-equal-to)0.05 and increases rapidly under further increasing x at normal atmospheric pressure. On the basis of these results, the microscopic origin of the magnetic anisotropy of Mn2−xCoxSb is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348282
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties of the intermetallic compounds MM'X(M=Cr,Mn, M'=Ru,Rh,Pd, and X=P,As) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4639-4641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization, magnetic susceptibility, and crystal structure are investigated on the ternary chromium arsenides CrM'As (M'=Ru,Rh,Pd) and ternary manganese phosphides and arsenides MnM'P(M'=Rh,Pd) and MnM'As(M'=Ru,Pd). MnRhP, MnRuAs, and MnPdAs are ferromagnets with a Curie temperature of Tc=401, 496, and 210 K, respectively. CrRhAs is an antiferromagnet with a Néel temperature of TN=165 K. MnPdP and CrPdAs show spin-glass-like freezing. A magnetic order-order transition is observed for CrRuAs. Susceptibility χ versus temperature curves are well expressed by a formula χ =C'/(T − θ'P)γ for all present compounds. The values of γ are about 3/2 for manganese compounds and CrPdAs, and about 1/2 for CrRuAs and CrRhAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348281
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of instability in amorphous silicon thin-film transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7301-7305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Instability mechanism of amorphous silicon-silicon nitride thin-film transistors (TFTs) is examined. By investigating double-layer insulator TFTs, it is demonstrated that the instability is caused by an electrical charge stored at the interface between amorphous silicon and silicon nitride. The amount of stored charge at the interface (Q) does not depend on either drain voltage or drain current. Study on TFTs with several insulator thicknesses has shown that Q strongly depends on the band bending in the amorphous silicon that is related to the gate electric field (E) through the gate insulator. The Q-E relationship is found to be a more general expression of the dependence of threshold voltage shift on gate voltage, and is incorporated into a formula suitable for examining the interface quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347577
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  • 6
    Electronic Resource
    Electronic Resource
    Frequency dependence of drift mobility in a-Si:H measured by traveling-wave method (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8237-8240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The drift mobility was measured in phosphorus-doped hydrogenated amorphous silicon films using the traveling-wave technique as a function of surface acoustic Rayleigh wave frequency and temperature. In the high-temperature range in which the Fermi energy lies between the demarcation energy Ed = kBTln(v0/v) and the mobility edge, the drift mobility was found to be independent of the traveling wave frequency v in agreement with the multiple trapping theory. The frequency dependence of the acousto-electric voltage agrees with the predictions of the theory describing the interaction of the charge carriers with the traveling electric wave.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347429
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  • 7
    Electronic Resource
    Electronic Resource
    Pressure effect on magnetic transition temperatures of Mn3Ga1−xMxC (M=Zn,Sn) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4824-4826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure effects on magnetic transition temperatures of Mn3Ga1−xMxC (M=Zn,Sn) have been measured in order to study the nature of the order-order magnetic phase transitions. The magnetic phase diagrams for the transition temperatures versus concentration and for the transition temperatures versus pressure have been determined. For Mn3Ga1−xZnxC, the intermediate magnetic phase observed in Mn3GaC above 3 kbar appears even at normal atmospheric pressure. On the basis of these results, the relation between the effect of alloying and of pressure on the magnetic transitions of the Mn3Ga1−xMxC (M=Zn,Sn) systems is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344749
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  • 8
    Electronic Resource
    Electronic Resource
    Secondary recrystallization behavior and magnetic properties of grain oriented 2.2% Si-1.5% Mn steel : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6606-6608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The secondary recrystallization behavior and magnetic properties in ultralow carbon 2.2% Si-1.5% Mn steel containing 0.008% sol.Al was investigated. It was found that the atmosphere of final annealing plays an important role on the secondary recrystallization in this steel. In the case of annealing in N2 containing gas, good magnetic properties equivalent to those of conventional grain-oriented electrical steel were obtained. However, annealing in 100% H2 gas resulted in poor magnetic properties. Annealing in N2 containing gas can be considered as causing a sharp {110}〈001(approximately-greater-than) texture due to the strengthened inhibition resulting from an increase in fine nitrides. These results suggest the possibility of a new simple processing of grain-oriented electrical steel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352525
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  • 9
    Electronic Resource
    Electronic Resource
    Synthesis of Tl-based "2234'' superconductors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2347-2350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nearly single-phase samples of superconducting Tl–Ba–Ca–Cu–O "2234'' were successfully synthesized. The sample sintered in air had Tc of 112 K. Post-annealing of the sintered sample in a high-pressure oxygen gas made its Tc increase up to 115 K. The sample sintered in argon gas had Tc of 90 K. The thermoelectric power (TEP) of the sample was also measured. All the samples showed positive TEP signals. The magnitude of TEP signal decreased as Tc increased. Thus, it was likely that the as-sintered 2234 phase was in an under-doped state with respect to the optimum carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351087
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  • 10
    Electronic Resource
    Electronic Resource
    Electromigration-induced abrupt changes in electrical resistance associated with void dynamics in aluminum interconnections (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 207-212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration-induced failure mechanisms were investigated by means of extremely sensitive resistance change measurements and simultaneous observations using scanning electron microscopy. Abrupt changes in resistance (ACRs), classified into three types: downward steps, upward steps, and oscillations, were found to occur frequently during the dc current stressing test. It was conspicuously observed that there was a rapid void annihilation associated with an abrupt increase in resistance, and a rapid void formation with a decrease in resistance. ACRs are considered to be caused by a rapid change in the number of excess vacancies concomitant with void annihilations or formations. The thermodynamical analysis on the stability of a void strongly suggests that the change of a local stress from tensile to compressive causes a rapid annihilation of voids, and the opposite one causes a rapid formation. Temperature dependence of the intensity of ACRs exhibited an activation energy of 0.43 eV, which implied that grain boundary electromigration was the driving force of ACRs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347752
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