ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (201)
  • Articles: DFG German National Licenses  (201)
Collection
  • Articles  (201)
Source
Keywords
Publisher
Years
Topic
  • 1
    Electronic Resource
    Electronic Resource
    Enzyme purification by affinity chromatography using a non-covalently bound adsorbent
    Amsterdam : Elsevier
    Journal of Chromatography A 130 (1977), S. 446-450 
    Details
    ISSN: 0021-9673
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0021-9673(00)89845-3
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Formation of radical ion pairs in aniline adsorption on zeolites (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 819-823 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100181a054
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Analysis of terbium thermodynamic characteristics for magnetic heat pump applications (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3908-3911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on molecular field theory, including the effect of the field-dependent nature of Néel temperature, the entropy, and the magnetocaloric effect in terbium (Tb) have been calculated with the external field between 0 and 7 T (Tesla). The calculated results are compared with the existing experimental measurements. The maximum magnetocaloric temperature change (ΔT) is approximately 14 K near the zero-field Néel temperature (230 K) for an external field at 7 T field. This relatively large magnetocaloric effect indicates that Tb could be an attractive candidate for magnetic heat pump application. The results are then used to study the performance of heat pumps for the Carnot cycle, the constant field cycle, and the ideal regenerative cycle. The performances of these three cycles are discussed and compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352267
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Evolution of vacancy ordering and defect structure in epitaxial YSi2−x thin films on (111)Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3307-3312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of vacancy ordering and defect structure in epitaxial YSi2−x thin films on (111)Si have been studied by both conventional and high-resolution transmission electron microscopy. Epitaxial YSi2−x with an ordered vacancy structure was grown on (111)Si by rapid thermal annealing. In samples annealed at 500 °C for 120 s epitaxial YSi2−x was found to form. After annealing at 600 °C for 15 s, the appearance of additional diffraction spots is attributed to the formation of an ordered vacancy superstructure in the epitaxial YSi2−x thin films. In samples annealed at 600 °C for longer time or higher temperatures, the splitting of extra diffraction spots is correlated to the formation of an out-of-step structure. Streaking of the split diffraction spots in the diffraction pattern is attributed to the presence of an out-of-step structure with a range of M values. The M was found to settle down to 2 after high-temperature and/or long time annealing. Planar defects in YSi2−x films were analyzed to be stacking faults on {101¯0} planes with 1/6 〈1¯21¯3〉 displacement vectors. Computer simulation was carried out to determine the atomic structure of stacking fault. The simulated images are seen to match rather well with experimental images taken under two different values of defocus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350950
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Photoabsorption and photoionization cross sections of gas phase GeH4 and Rydberg structures of GeH4 and SiH4 (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 1530-1536 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photoabsorption and photoionization cross sections of GeH4 from the ionization threshold to 1060 A(ring) have been measured using synchrotron radiation as the continuum light source. The cross sections for the production of neutral products in the same spectral region have also been determined. Weak diffuse structures were observed in both the photoabsorption and photoionization spectra. The steplike ionization structures in the ionization spectrum were observed. The adiabatic ionization potential was determined to be at 1177.6±0.5 A(ring) which is in excellent agreement with a value recently reported by Ruscic et al. [J. Chem. Phys. 92, 1865 (1990)] using a photoionization mass spectrometry technique. Rydberg series in the 1060–1180 A(ring) region converging to the ground state of GeH4+ have been tentatively assigned. In addition, the assignments of Rydberg states of SiH4 reported in the literature have been re-examined in light of the recently reported ionization potential [Berkowitz et al., J. Chem. Phys. 86, 1235 (1987)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465321
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Micron-scale thermal characterizations of interfaces parallel or perpendicular to the surface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2208-2223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical and experimental possibilities are presented of a modulated photothermal method, laser-induced photoreflectance, for inspecting thermal diffusivities and quality of interfaces in composite materials with micron-scale spatial resolutions. The models are established for semi-infinite materials containing interfaces parallel or perpendicular to the sample surface. The applications concern thermal diffusivity measurements of anisotropic polycrystals and detection of thermal resistance in damaged materials and at interfaces between reinforcements and matrix in composites. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360137
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Hydrostatic pressure on HgBa2CaCu2O6+δ and HgBa2Ca2Cu3O8+δ : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6941-6943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting transition temperature Tc and its pressure dependence dTc/dP of HgBa2CaCu2O6+δ (Hg-1212) and HgBa2Ca2Cu3O8+δ (Hg-1223) were measured up to 17 kbar. Tc increases with pressure approximately linearly for both compounds before oxidation. However, the nonlinearity in the Tc-P correlation shows up after oxidation in both compounds. For Hg-1212, the average dTc/dP decreases as oxygen doping increases, while it increases in Hg-1223. These observations are in conflict with the modified pressure-induced charge-transfer model, but might be attributed to the possible existence of fine electronic structure. These observations suggest that a Tc much higher than 140 K might be achievable in Hg-1223 by means of higher physical or chemical pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358122
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Optical study of strained ZnSe/GaAs and ZnMnSe/GaAs epilayers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2936-2940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied strain-induced band splittings of ZnSe/GaAs and Zn1−xMnxSe/GaAs epilayers of 0.064–3 μm thickness by reflectance and polarized photoluminescence. Polarized photolumi- nescence was found particularly useful in optical transition identification. The spectacular difference in magnetic field sensitivity of heavy hole and light hole exciton in ZnMnSe is also very helpful in transition identification. The evaluated heavy-light hole band splitting is in general accordance with previous data. An exceptionally strong variation of the strain with epilayer thickness is observed in the thickness range 0.5–2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356188
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Atomic structure of Si/TbSi2/(111)Si double-heterostructure interfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5744-5747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi2/(111)Si double-heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(111)Si interfaces can be systematically deduced from the dichromatic constrained-coincidence-site-lattice patterns. The atomic structures were determined by comparing HRTEM images with computer-simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358411
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Annealing temperature and O2 partial pressure dependence of Tc in HgBa2CuO4+δ : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7127-7129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of HgBa2CuO4+δ (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (Ta), and O2 partial pressure (P0), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260 °C≤Ta≤400 °C, the obtained Tc is nearly the same (∼97 K). However, it decreases quickly with Ta(approximately-greater-than)300 °C in high vacuum (P0∼10−8 atm), and reaches zero at Ta=400 °C. On the other hand, Tc decreases with the decrease of Ta in high-pressure O2 (∼500 atm) and reaches ∼20 K at about 240 °C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of Tc variation (0→97 K→20 K) was obtained with anion doping alone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358052
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...