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  • Articles  (290)
  • Articles: DFG German National Licenses  (290)
  • 1990-1994  (290)
  • Physics  (207)
  • Biology  (99)
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  • Articles  (290)
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  • 1
    Electronic Resource
    Electronic Resource
    Topological analysis of some special graphs. III. Regular polyhedra (1991)
    Springer
    Journal of cluster science 2 (1991), S. 105-116 
    Details
    ISSN: 1572-8862
    Keywords: Electronic structure ; cluster ; eigenvectors ; Kronecker product
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A regular polyhedron is isomorphic to a cluster on which every face has same number of bonds and every atom has an equal number of coordinating atoms. A general strategy for generating the eigenvectors and the eigenvalues of regular polyhedra is given. Net sign analyses are also performed on the eigenvectors of regular polyhedra. The results provide us a quick way to grasp the topological feature of the electronic structure of clusters having interesting topology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00702951
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  • 2
    Electronic Resource
    Electronic Resource
    Topological analysis of some special graphs: III. Regular polyhedra (1991)
    Springer
    Journal of cluster science 2 (1991), S. 219-229 
    Details
    ISSN: 1572-8862
    Keywords: Atomic cluster ; cluster bonding ; cluster structure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A regular polyhedron is isomorphic to a cluster on which every face has same number of bonds and every atom has an equal number of coordinating atoms. A general strategy for generating the eigenvectors and the eigenvalues of regular polyhedra is given. Not sign analyses are also performed on the eigenvectors of regular polyhedra. The results provide us a quick way to grasp the topological feature of the electronic structure of clusters having interesting topology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00702829
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  • 3
    Electronic Resource
    Electronic Resource
    Early stages of laser mixing process in Sb/Ge multilayer thin films (1993)
    Springer
    Applied physics 56 (1993), S. 132-137 
    Details
    ISSN: 1432-0630
    Keywords: 64.75.+g ; 78.90.+t ; 81.40.-z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The onset of mixing at the interfaces between Sb and Ge in thin multilayered films containing two or four layers has been studied. The films were irradiated with nanosecond laser pulses in order to trigger mixing, and in situ reflectivity measurements were used to follow the transformation in real-time. Cross sectional transmission electron microscopy analysis was used to study both the structure and the composition profile before and after irradiation. A threshold irradiation energy exists for the onset of mixing, below which roughening of the interface between the layers is observed, together with recrystallization of the surface Sb layer following melting. The results are consistent with a melting/diffusion process which is inhomogeneously nucleated at the interface between the top Sb and Ge layers. Once mixing is initiated an amorphous Sb-Ge layer of constant thickness is formed, corresponding to mixing along a well defined planar melt front. Voids are observed at the former Sb/Ge interface, which may be related to interfacial stress in the as-grown configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00517680
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  • 4
    Electronic Resource
    Electronic Resource
    Structural ripple formation in Ge/Sb multilayers induced by laser irradiation (1994)
    Springer
    Applied physics 58 (1994), S. 197-202 
    Details
    ISSN: 1432-0630
    Keywords: 64.75.+g ; 78.90.+t ; 81.40.−z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (λ=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332179
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of diffusion coefficients of some indoles and ascorbic acid by flow injection analysis (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 1003-1005 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100365a092
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  • 6
    Electronic Resource
    Electronic Resource
    Studies on the relation between the eigenvalue and enhancement of Kerr effect for magneto-optical materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6830-6839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the universal additivity law of the interference of light the following was achieved. (i) An analytic representation between the eigenvalue of the Kerr rotation angle θ0k and the enhanced θk for a double-layered film, θk=en1 θ0k, was obtained theoretically, where e is the enhancement factor and n1 is the refractive index of the dielectric medium. (ii) An analytic representation between θk and θ0k (θk=e013e123n2θ0k) of the trilayered film [bilayered transparent media and monolayered magneto-optical (MO) medium], was also obtained, where e013 and e123 are the enhancement factors: The calculated θk value is in good agreement with experimental results for e=1. In general, the theoretical calculation shows that θk is related to the thickness of the transparent media. Thus, if one wants to get an optimum value for θk, the thickness of the first transparent film layer (such as a glass substrate) must be selected carefully. It also shows that if the variation of the thickness of the glass substrate is 5 nm, θk could vary by 0.1° for MnBiCe films. (iii) The relation connecting θk with θ0k1 and θ0k2 for bilayered MO films has been theoretically studied, where θ0k1 and θ0k2 are the eigenvalues of the Kerr rotation angle of MO materials 1 and 2, respectively. Finally, θk for a Fe/Co film was calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355083
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  • 7
    Electronic Resource
    Electronic Resource
    Neutron-diffraction and Mössbauer effect study of the preferential silicon site occupation and magnetic structure of Nd2Fe14−xSixB (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6798-6809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A neutron-diffraction study of Nd2Fe14−xSixB has shown that silicon preferentially occupies the 4c site in the transition-metal sublattice in Nd2Fe14B. Silicon also exhibits a moderate preference for the 8j1 site, is almost excluded from the 16k2 site, and avoids the 16k1, 8j2, and 4e sites. The silicon site occupancy is correlated with a preference for a silicon atom to have rare-earth atoms in its coordination environment. The Mössbauer spectra of Nd2Fe14−xSixB have been fit with a model which takes into account the distribution of near-neighbor environments of an iron atom due to the presence of silicon. These fits show that the substitution of silicon in the near-neighbor environment of an iron atom primarily influences the long-range contributions to the hyperfine field experienced by the iron. The mechanism for the increase in the Curie temperature when silicon is added to Nd2Fe14B-type magnets is more subtle than previously believed, but can be explained by the relative decrease in the proportion of short iron-iron bonds when silicon is substituted for iron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355080
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  • 8
    Electronic Resource
    Electronic Resource
    Neutron diffraction and Mössbauer effect study of several Nd2Fe17−xAlx solid solutions : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6029-6031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum-substituted Nd2Fe17−xAlx solid solutions with x=2.30, 4.44, 6.13, 8.00, and 9.40 have been studied by neutron diffraction and Mössbauer spectroscopy. A Rietveld analysis of the neutron scattering indicates that the aluminum atoms have a high initial affinity for the 18h site, show a high affinity for the 6c site at high aluminum concentrations, and are absent from the 9d site at all aluminum concentrations. The Mössbauer spectra show a maximum in both the maximum and weighted average hyperfine field for x≈2. This indicates that the lattice expansion which occurs with aluminum substitution is sufficient, at least for small values of x, where magnetic dilution is small, to enhance the intrasublattice coupling between the iron moments, and to increase the magnetic hyperfine fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353459
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  • 9
    Electronic Resource
    Electronic Resource
    Impurity effects on both the creation and the migration of Ga vacancies in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 674-684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of impurities, such as Si and Be, on both the creation and the migration of Ga vacancies in annealing of GaAs were investigated by a slow positron beam technique. The results show that vacancies diffuse from the surface during the annealing and one of the dominant types is a monovacancy of Ga, VGa, in Be-doped GaAs and/or Si-doped GaAs, while the other is a divacancy of VGa-VAs in undoped GaAs. In annealing the bilayer structures composed of the Si-doped layer grown on the Be-doped layer, it was found that VGa is a major type of defect rather than VGa-VAs if the Si concentration is higher or lower than the Be one in GaAs, but VGa-VAs is dominant if the concentrations of the impurities are similar. This proposes that the interaction between Si and Be is stronger than that of VAs-BeGa and/or VGa-SiGa. The Ga interstitial IGa is created in the Be-doped layer where IGa interacts with VGa created from the surface and suppresses the migration of VGa. This supports the validity of the kick-out mechanism involving a column-III interstitial rather than the Longini mechanism for Be diffusion in GaAs. In Si-doped GaAs, VGa is created from the surface and the diffusion constant of VGa decreases with the increase of Si doping concentration. This implies that VGa forms a complex of SiGa-VGa and the interaction time of VGa at the Si donor by making a complex of SiGa-VGa is a rate-limiting step in the diffusion of VGa in GaAs. The present results propose the creation of IGa and VGa in the Be-diffused GaAs and in Si-diffused GaAs, respectively. This is consistent with the Fermi-level effect of the impurities on the creation of those defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349647
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  • 10
    Electronic Resource
    Electronic Resource
    Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 182-192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal interdiffusion behavior of intrinsic nominally lattice-matched GaInAs/AlInAs heterostructures grown by molecular-beam epitaxy, studied using electron microscopy, is reported. At temperatures as low as 700 °C, significant degrees of interdiffusion are observed. X-ray microanalysis of the multilayers reveals that the interdiffusion takes place along a nonlinear (that is, non-lattice-matched) path. This behavior has previously been attributed to the pronounced differences in the elemental diffusivities of the constituent binary compounds. In addition, high-resolution electron microscopy (HREM) was used to determine the detailed interfacial structure of the material. Such a determination is only possible under favorable and well-defined experimental conditions. The accuracy and limitations of HREM analysis of interfacial abruptness in semiconductor interfaces are commented on.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350376
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