ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles  (28)
  • Articles: DFG German National Licenses  (28)
  • American Institute of Physics (AIP)  (15)
  • Wiley-Blackwell  (13)
  • Oxford University Press
  • 1990-1994  (22)
  • 1975-1979  (4)
  • 1960-1964  (2)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5457-5457 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently an elegant and quite powerful finite-system approach to determine the exponents ηx and ηz from simple spectral properties has been proposed. For critical systems, the two exponents can be expressed in terms of finite-size spectral gaps as follows: η(N)x=2ΔE01(N)/ΔE(N), η(N)z=2ΔE00(N)/ΔE(N). Here ΔE(N) is the finite-size gap between the ground state (SzT=0,k=0) and the lowest excitation at k=2π/N; ΔE01(N) is the gap to the lowest ||SzT||=1 excitations (at k=π), and ΔE00(N) is the gap to the next lowest SzT=0 excited state. The η(N) sequence is then extrapolated to N→∞. For XY models, differences between s=1/2 and s≥1 appear. For s=1/2, the excitations which determine ΔE00(N) and ΔE(N) are degenerate, which implies that ηz=1/2, in agreement with the exact analytic result. For spin-1, however, the next lowest SzT=0 state is located at k=2π/N instead of k=π, and is therefore identical to the state which determines the gap ΔE.The resulting equality ΔE=ΔE00 implies ηz=2, as in the spin-1/2 case. In fact, our result corresponds to power-law decay for all s, and hence we differ from Schulz and Ziman, who claim the out-of-plane correlation function decays exponentially for s〉1/2. For the in-plane correlation function, the spectral gap method again agrees with the exact result ηx=0.5 for s=1/2. The consensus of this and other numerical methods for s=1 gives a value ηx(approximately-equal-to)0.20, considerably different from the case of s=1/2. Hence it is tempting to conjecture that ηx is s dependent, implying that XY models belong to different universality classes for different s. However, a finite-size study of the conformal anomaly produces the result that c=1, independent of s. This situation is further discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBa2Cu3O7 have been prepared on SrTiO3 and LaAlO3 substrates by a high-pressure planar dc-sputtering technique. By covering the substrate heater with a frame of polycrystalline YBa2Cu3O7 substantial improvements of the YBa2Cu3O7 film properties were achieved. These are characterized by dc-resistivity values ρ(T) of less than 50 μΩ cm at 100 K and ρ(300 K)/ρ(100 K) values of up to 3.9. Significant deviations from the usual linear ρ(T) behavior were found. Critical temperatures above 90 K, resistive transition widths down to 0.3 K, and critical current densities of about 5 × 106 A/cm2 at 77 K confirm the high quality of the films. As indicated by Rutherford backscattering and high-resolution transmission electron microscopy the films exhibit a microstructure characterized by a reduced density of lattice defects. However, lattice-coherent precipitates with a diameter of about 5–10 nm were observed. As an outstanding feature the films exhibit, besides the initial steep falloff at Tc, a further gradual decrease of the microwave surface resistance at 87 GHz below 50 K by at least one order of magnitude. These results are very promising for millimeter-wave applications of epitaxial YBa2Cu3O7 thin films.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3860-3864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions for the preparation of nominally undoped semi-insulating (SI) InP wafers by annealing under controlled phosphorus pressure are described. It is demonstrated by the results of electrical profile measurements (differential Hall effect) and by photoluminescence that diffusion effects in a thin peripheral layer (≈20 μm) can be correlated to a phosphorus in- and indium out-diffusion. But diffusion of these species is correlated to a donor behavior and relatively slow. It can, therefore, not be used to explain the SI bulk property which seems not to depend on the phosphorus overpressure during annealing.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in liquid-encapsulation Czochralski (LEC) grown p-type InP:Fe codoped with Zn have been investigated by means of temperature-dependent Hall-effect (TDH), deep-level transient spectroscopy (DLTS), calorimetric absorption spectroscopy, and electron spin resonance measurements. Although a dominant deep hole trap is revealed both by DLTS and TDH measurements in the vicinity of the valence band edge at EV+0.2 eV, the spectroscopic analysis unambiguously invalidates previous speculations on the existence of a second energy level of the isolated iron impurity in the band gap of InP, i.e., a Fe4+/Fe3+ donor level. From the axial concentration profile and a comparison with a LEC-grown p-type InP crystal doped with Zn only it seems that the trap is not even iron-related in contrast to tentative assignments often found in the literature. Native or Zn-related defects which depend on the particular growth conditions used are assumed to account for this level.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of pure, nonhydrogenated amorphous silicon (a-Si) was modified by means of ion implantation, furnace annealing, and pulsed laser annealing. Defects in a-Si were probed by measuring the photocarrier lifetime τ at low carrier densities (1018/cm3) with subpicosecond resolution using pump-probe reflectivity measurements. The average cross section of defect-related midgap states for free-carrier capture is found to be 6×10−16 cm2. In addition, the average bond-angle distortion Δθ in a-Si was derived from Raman spectroscopy. Annealing as-implanted a-Si for 1 h at T≤500 °C induces defect annihilation as well as network relaxation. In contrast, 32 ns pulsed laser heating of a-Si just below the melting threshold leads to relaxation of Δθ without significant defect annihilation. This annealing behavior can be understood on the basis of defect diffusion kinetics. Implanting fully relaxed a-Si with 1 MeV B+, Si+, and Xe+ up to damage levels of 0.004 displacements per atom raises the defect density without affecting Δθ. Only after the defect density has saturated at higher damage levels is Δθ returned to the as-implanted level. The electronic density of states of a-Si is determined using optical-absorption spectroscopy, yielding Nsat≈0.5 at. % for the saturation defect density in a-Si at room temperature. Electron paramagnetic resonance shows that a minor fraction (0.02 at. %) of these defects is spin active. The response of c-Si and relaxed a-Si to implantation damage is comparable, suggesting that the defect populations in both materials are similar. Comparing carrier lifetime measurements and Raman spectroscopy for the various experimental treatments demonstrates that there is no unique correlation between the defect density and Δθ in a-Si. Assuming that defects and Δθ have independent enthalpic contributions, the Gibbs free energy of various structural states of a-Si is calculated. These calculations indicate that the melting temperature of a-Si may vary from 1010 to 1490 K.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The increase in the microwave surface resistance Rs of high Tc superconductors at elevated microwave power levels is reported for both oriented and unoriented Tl-based films as a function of rf magnetic field at 820 MHz and 18 GHz. The application of dc magnetic fields produces qualitatively similar increases in Rs and in the surface reactance Xs. The increase in Rs with dc field is shown to arise from simple decoupling of grains by intergranular magnetic flux. The increase in Rs with microwave power, on the other hand, is a consequence of hysteretic intergranular processes.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2231-2233 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate experimentally that the far-infrared photoresponse of GaAs/AlGaAs heterostructures at photon energies corresponding to cyclotron resonance absorption is strongly enhanced in the adiabatic transport regime of the quantum Hall effect (QHE). Ideal adiabatic transport is characterized within the edge channel picture of the QHE by the absence of interedge channel scattering. We realize adiabatic transport by the means of a multiple gate finger structure, which is used for a selective population of the edge channels. The cyclotron resonance absorption is interpreted as an additional interchannel scattering process increasing the magnetoresistance.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An increase by over three orders of magnitude from 0.58 mΩ to 1.17 Ω was observed at 4.0 K in the 3 GHz microwave surface resistance of ceramic YBa2Cu3O7−δ following exposure to neutrons. The transport resistivity of an unirradiated pellet was linear in temperature down to Tc with a room-temperature value of 2.13 mΩ cm and a resistivity extrapolated to 4.0 K of 0.53 mΩ cm. Following irradiation, the resistivity rose with decreasing temperature from a room-temperature value of 1.5 Ω cm to a maximum at around 45 K with little change evident at Tc . These results, in conjunction with eddy current, susceptibility, iodometric titration, and thermally stimulated luminescence measurements on irradiated and unirradiated samples, collectively suggest that the effect of neutron irradiation has been to decrease intergranular coupling without the development of an insulating phase.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 956-957 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductive response of hydrogenated amorphous silicon (a-Si:H) p-i-n diodes has been investigated under conditions of low-temperature operation. We show that cooled p-i-n diodes exhibit an enhanced infrared response when operated under forward bias conditions. The induced IR response is of the order of 10−3A/W, extending out to wavelengths of about 2–3 μm with the long wavelength cutoff being determined by the properties of the glass/indium–tin–oxide entrance window. We propose that the IR photoeffect is due to the re-excitation of band-tail trapped excess carriers injected into the localized conduction and valence band tail states in the vicinity of the n+- and p+-contact regions.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2136-2138 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) is used to locally modify p-n junctions on a scale of a few tens of nanometers. The p-n junction is composed of a phosphorus-doped, hydrogenated amorphous Si [a-Si:H(P)] layer deposited on heavily doped p-type crystalline Si(111). Under conditions of high current densities, with the p-n junction biased in forward direction, the a-Si:H layer is structurally changed leading to a decrease of the junction barrier height. The resulting exponential increase of hole injection into the modified amorphous layer leads to electronically active structures. They are detected by STM owing to their differing electronic properties.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...