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  • Articles  (30)
  • Articles: DFG German National Licenses  (30)
  • American Institute of Physics (AIP)  (30)
  • Amsterdam : Elsevier
  • Geological Society of America (GSA)
  • 1995-1999  (15)
  • 1990-1994  (15)
  • Physics  (30)
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  • Articles  (30)
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  • Articles: DFG German National Licenses  (30)
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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3083-3083 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
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  • 12
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Asymmetrically cut perfect crystals, in both the Laue and Bragg geometries, are examined as single crystal monochromators for x-ray beams that are collimated to a small fraction of the Darwin width, as is typical in experiments with coherent x rays. Both the Laue and asymmetric Bragg geometries are plagued by an inherent chromatic aberration that increases the beam divergence much beyond that of the symmetric Bragg geometry. Measurements from a recent experiment at the ESRF are presented to compare Si(220) (symmetric Bragg), diamond(111) (asymmetric Laue), and diamond(111) (symmetric Bragg inclined) geometries. © 1995 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5143-5154 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope in ultrahigh vacuum has been used to investigate the growth, morphology, and surface atomic structure of ultrathin titanium silicide films on Si(111) substrates. Microstructural considerations have been used to identify various stages of the silicide growth. Atomic resolution images of a titanium silicide crystallite facet, formed at 850 °C, have been identified as a 2×2 silicon termination of a C54-TiSi2(010) surface. Possible epitaxial silicide/silicon relationships are provided. Theoretical consideration has been given to the interatomic bonding in the C54-TiSi2 lattice and the dangling bond density of ideally terminated silicide planes has been calculated. The highly reconstructed atomically flat surface of a large crystallite, formed at 1200 °C, has been assigned as a C54-TiSi2(311) plane giving the epitaxial relation C54-TiSi2(311)(parallel)Si(111). The presence of pairs and linear chains of defects, with common orientations, is attributed to the decomposition of a diatomic gas on the facet, producing sites of preferential adsorption on the silicide surface. © 1995 American Institute of Physics.
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 563-571 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) in ultrahigh vacuum has been used to investigate the growth, morphology, and surface atomic structure of ultrathin titanium silicide films on Si(100) substrates. Microstructural considerations have been used to identify various stages of the silicide growth. Methods for STM crystallography have been developed and used to identify possible epitaxial silicide/silicon relationships based on morphological considerations. Atomic resolution images of a titanium silicide crystallite have identified a 2×2 silicon termination of a C54-TiSi2(111) surface. It is shown that unambiguous identification of epitaxial relationships requires images of the atomic structure of the silicide crystallite surfaces in addition to morphological information. © 1995 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3326-3328 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. © 1999 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1607-1609 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A near-field optical microscope (NFOM) has been developed that combines the features of a near-field optical microscope and an atomic force microscope. Improved control over tip-sample separation has led to improved optical imaging and independent surface topography information. The tip oscillation is normal to the sample plane thereby reducing lateral forces—important for nonperturbative imaging of soft samples. Both topographic images and reflection near-field optical images are presented which demonstrate the capability of the system. © 1996 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 5454-5467 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Br2 fragment rotational distributions that result from the vibrational predissociation of NeBr2 in the B electronic state have been measured for several initial vibrational levels. In each case, the rotational distributions extend to the effective energetic limit determined by the amount of energy available (Eavl) for disposal into the fragment rotational and translational degrees of freedom. Analysis of the data allows refinement of the NeBr2 dissociation energy; we find that D0=70.0±1.1 cm−1 for the X electronic state, v=0. Both Δv=−1 and −2 dissociation events have been examined. For dissociation pathways with approximately the same value of Eavl the Δv=−2 pathways are observed to have a higher fraction of the fragment energy in rotational excitation. The overall shape of the Δv=−1 distributions are insensitive to the value of Eavl, suggesting that a Franck–Condon model for the dissociation may have some validity, though quantitative quantum mechanical calculations demonstrate that this model does not reproduce the large degree of fragment rotational excitation. Two classical models for the dissociation also fail to reproduce the extent of fragment rotational distribution. This result is discussed in light of previous experimental and theoretical investigations, focusing on the apparent agreement of classical models with the IBr fragment rotational distributions that result from the dissociation of NeIBr. © 1997 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2214-2219 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-power proportional temperature controller, using a fast infrared pyrometer, has been developed to change and control the temperature of metallic ribbon samples with microsecond response. The apparatus provides uniform and controlled heating for time-resolved x-ray scattering studies of structural phase transitions. When high-power pulse heating is used, the system is capable of increasing the sample temperature at rates in excess of 106 K/s, without overshoot and with subsequent control to ±1 K at temperatures as low as 650 K.
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3891-3897 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Near-field imaging is a means of exceeding the diffraction limit in optical microscopy to yield subwavelength resolution optical images of a sample surface. In order to achieve such high resolution, it is necessary to scan the measurement probe above the surface at a height of only a few nanometers which requires careful control of the separation between tip and sample. In the implementation of the near-field optical microscope (NFOM) reported here, the distance regulation scheme is based on an inverted noncontact atomic force microscope (AFM) in which a cantilever is used as the sample substrate and imaging is performed with a fiber optic tip. In this way, both the benefits of AFM and NFOM are realized simultaneously. © 1996 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3793-3798 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a highly sensitive new type of calorimeter based on the deflection of a "bimetallic'' micromechanical sensor as a function of temperature. The temperature changes can be due to ambient changes, giving a temperature sensor or, more importantly, due to the heat absorbed by a coating on the sensor, giving a heat sensor. As an example we show the results of using the sensor as a photothermal spectrometer. The small dimensions and low thermal mass of the sensor make it highly sensitive and we demonstrate a sensitivity of roughly 100 pW. By applying a simple model of the system the ultimate sensitivity is expected to be of the order of 10 pW. The thermal response time of the cantilever can also be determined, giving an estimate of the minimum detectable energy of the sensor. This we find to be 150 fJ and again from our model, expect a minimum value of the order of 20 fJ.
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