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  • Articles  (188)
  • Articles: DFG German National Licenses  (188)
  • 2000-2004  (188)
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  • Articles  (188)
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  • 1
    Electronic Resource
    Electronic Resource
    Disordered Vortex Phases in YBa2Cu3O7−δ (2000)
    Springer
    Journal of superconductivity 13 (2000), S. 741-748 
    Details
    ISSN: 1572-9605
    Keywords: disordered vortex phases ; YBa2Cu3O7−δ
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The disordered vortex phases induced by line and point pinning in YBa2Cu3O7−δ are explored. At high defect densities, only a single disordered solid separated from the liquid phase by a melting line is observed. At low defect densities the topology of the phase diagram changes dramatically, with a vortex lattice phase adjoining disordered phases at high or low field. Critical points at the termination of the first-order melting line separate the lattice and the disordered phases. The line defect disordered phases follow the expected Bose glass behavior, while the point defect disordered phases do not exhibit the expected vortex glass behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007862114629
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  • 2
    Electronic Resource
    Electronic Resource
    Growth kinetics and mechanisms of aluminum-oxide films formed by thermal oxidation of aluminum (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1649-1656 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics and mechanisms of thin aluminum-oxide films formed by the dry, thermal oxidation of a bare Al(431) substrate at a partial oxygen pressure of 1.33×10−4 Pa in the temperature range of 373–773 K were studied using x-ray photoelectron spectroscopy. The initial oxidation of the bare Al substrate proceeds by an island-by-layer growth mechanism, involving the lateral diffusion over the bare Al substrate surface of mobile oxygen species. At low temperatures (T≤573 K), an amorphous oxide film develops that attains a limiting (uniform) thickness. At high temperatures (T〉573 K), growth is not impeded at a limiting thickness. Kinetic analysis established the occurrences of two different oxide-film growth regimes: an initial regime of very fast oxide-film growth and a second, much slower oxidation stage that is observed only at T〉573 K. These results could be discussed in terms of electric-field controlled, interstitial, outward transport of Al cations through a close packing of O anions in the amorphous films, and inward diffusion of O along grain boundaries in the crystalline films, respectively. For the electric-field controlled Al cation motion, a value of 2.6 eV was determined for the rate-limiting energy barrier, which is located at the metal/oxide interface. This corresponds with a Mott potential of −1.6 V. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491591
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  • 3
    Electronic Resource
    Electronic Resource
    Vacuum ultraviolet emission dynamics of a coplanar electrode microdischarge: dependence on voltage and Xe concentration (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 682-689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report nanosecond time-resolved measurements of the vacuum ultraviolet (VUV) emission and current waveforms for a planar, surface-discharge plasma display electrode in Xe/Ne mixtures. The 173 nm excimer emission is separately resolved from the overall VUV emission by a removable fused silica filter. The time difference between the maximum of excimer emission and that of resonant atomic emission is measured at high Xe concentration. The decay time of the overall VUV emission decreases strongly as the Xe concentration increases due to three-body collisions leading to Xe2 formation. The decay time constants versus Xe concentration and pressure are measured and compared with published rate constants. The efficiency of VUV emission increases rapidly from 4% to 10% Xe, but only marginally with further increase to 30% Xe. For fixed Xe ratio, the VUV emission efficiency drops with increasing driving voltage. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1486041
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  • 4
    Electronic Resource
    Electronic Resource
    Crystal structure and magnetic properties of the compound Nd5Co21B4 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1931-1933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compound Nd5Co21B4 belonging to the series Rm+nCo5m+3nB2n with m=3, n=2 has been synthesized by melt spinning. The crystal structure and magnetic properties of the compound have been studied by means of x-ray diffraction and magnetic measurements. The compound crystallizes in a hexagonal structure with space group P6/mmm. The Curie temperature, the saturation moment, and the planar anisotropy field of the compound are 570 K, 31.1 μB/f.u., and 861 kOe, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389082
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  • 5
    Electronic Resource
    Electronic Resource
    InxGa1−xAs/AlyGa1−yAs/AlzGa1−zAs asymmetric step quantum-well middle wavelength infrared detectors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3437-3441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs/AlyGa1−yAs/AlzGa1−zAs asymmetric step quantum-well middle wavelength (3–5 μm) infrared detectors are fabricated. The components display photovoltaic-type photocurrent response as well as the bias-controlled modulation of the peak wavelength of the main response, which is ascribed to the Stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3–5.3 μm infrared atmospheric transmission window. The blackbody detectivity (Dbb*) of the detectors reaches to about 1.0×1010 cm Hz1/2/W at 77 K under bias of ±7 V. By expanding the electron wave function in terms of normalized plane wave basis within the framework of the effective-mass envelope-function theory, the linear Stark effects of the intersubband transitions between the ground and first excited states in the asymmetric step well are calculated. The obtained results agree well with the corresponding experimental measurements. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391414
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  • 6
    Electronic Resource
    Electronic Resource
    Comparison of two methods of measuring the rapid temperature rises in split Hopkinson bar specimens (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1766-1771 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The temperature rise produced in iron and copper specimens by high strain deformation in a compression split Hopkinson pressure bar was measured simultaneously using two independent techniques: (i) small thermocouples (0.2 mm junction size) and (ii) an infrared (IR) camera system based on mercury cadmium telluride (spectral response between 8 and 12 μm). The response time of the thermocouple system was limited by the time taken for heat to diffuse into the junction. In order to obtain useful data with the IR camera system, the emissivity of the specimen surface needed to be modified by depositing a layer of soot. Even so, the measured emissivity was low (0.4), suggesting that the soot layer was semitransparent to IR radiation. The thermocouples, however, yielded temperature measurements that were consistent with all the mechanical work performed on the specimens being converted to heat. The main positive result obtained with the IR camera system is that heating of the iron specimens was spatially nonuniform. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150534
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  • 7
    Electronic Resource
    Electronic Resource
    H− ion source test and development capabilities at ISIS : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 896-898 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The ISIS ion source is a surface plasma ion source of the Penning type, and routinely produces 35 mA of H− ions during a 200 μs pulse at 50 Hz for uninterrupted periods of up to 50 days. However, because of the constant demands on ISIS from the neutron user community, very little ion source development has ever been possible. It is now necessary to produce sources with enhanced performances for next generation projects such as the European spallation source. Hence a dedicated ion source development rig (ISDR) has been constructed at Rutherford Appleton Laboratory to fully characterize the ISIS ion source and then facilitate appropriate development work. The ISDR has been designed to replicate the beam transport configurations on both the present ISIS preinjector and the proposed ISIS radio frequency quadrupole, while providing additional beam diagnostics equipment. The commissioning of the ISDR will be described, and initial results presented, along with future development plans. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430879
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  • 8
    Electronic Resource
    Electronic Resource
    Low δ18O eclogites from the Kokchetav massif, northern Kazakhstan (2003)
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 21 (2003), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Oxygen isotopic compositions of silicates in eclogites and whiteschists from the Kokchetav massif were analyzed by whole-grain CO2-laser fluorination methods. Systematic analyses yield extremely low δ18O for eclogites, as low as −3.9‰ for garnet; these values are comparable with those reported for the Dabie-Sulu UHP eclogites. Oxygen isotopic compositions are heterogeneous in samples of eclogite, even on an outcrop scale. Schists have rather uniform oxygen isotope values compared to eclogites, and low δ18O is not observed. Isotope thermometry indicates that both eclogites and schists achieved high-temperature isotopic equilibration at 500–800 °C. This implies that retrograde metamorphic recrystallization barely modified the peak-metamorphic oxygen isotopic signatures. A possible geological environment to account for the low-δ18O basaltic protolith is a continental rift, most likely subjected to the conditions of a cold climate. After the basalt interacted with low δ18O meteoric water, it was tectonically inserted into the surrounding sedimentary units prior to, or during subduction and UHP metamorphism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1314.2003.00465.x
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  • 9
    Electronic Resource
    Electronic Resource
    Petrochemical and Tectonic Processes of UHP/HP Terranes II: Preface (2003)
    Oxford, UK : Blackwell Science Inc
    Journal of metamorphic geology 21 (2003), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1525-1314.2003.00458.x
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  • 10
    Electronic Resource
    Electronic Resource
    Ericoid mycorrhiza: a partnership that exploits harsh edaphic conditions (2003)
    Oxford, UK : Blackwell Science Ltd
    European journal of soil science 54 (2003), S. 0 
    Details
    ISSN: 1365-2389
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Plants that form ericoid mycorrhizal associations are widespread in harsh habitats. Ericoid mycorrhizal fungal endophytes are a genetically diverse group, and they appear to be able to alleviate certain environmental stresses and so facilitate the establishment and survival of Ericaceae. Some of the fungal taxa that form ericoid mycorrhizas, or at least closely related strains, also form associations with other plant hosts (trees and leafy liverworts). The functional significance of these associations and putative mycelial links between Ericaceae and other plant taxa, however, remain unclear. Evidence from environments that are contaminated by toxic metals indicates that ericoid mycorrhizal fungal endophytes, and in some instances their plant hosts, can evolve resistance to these metals. The apparent ability of these endophytes to develop resistance enables ericoid mycorrhizal plants to colonize polluted soil. This seems to be a major factor in the success of ericoid mycorrhizal taxa in a range of harsh environments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1351-0754.2003.0555.x
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