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  • Articles  (5)
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  • American Institute of Physics (AIP)  (5)
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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2716-2718 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick GaN films were deposited with growth rates as high as 250 μm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on (0001) sapphire and on (0001) 6H–SiC were compared in terms of their structural and optical properties. Considering x-ray rocking curve full width at half-maximum (FWHM: 420 arcsec), photoluminescence linewidths of the excitons (FWHM: 3 meV at 6 K and 100 meV at 300 K), free electron concentration, defect related luminescence, and the homogeneity of these properties, we find superior values for films grown on SiC. For both substrate materials we find an optimum growth rate window of 40–80 μm/h. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 415-417 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free- and bound-exciton luminescences of GaN epitaxial layers grown by a sublimation technique on 6H-SiC substrates were investigated using time-integrated and time-resolved photoluminescence measurements at low temperatures. Lifetimes were determined for the donor-bound exciton at 3.4722 eV and for two acceptor-bound excitons with energies of 3.4672 eV and 3.459 eV. On the basis of our results we obtain an upper limit of the free-exciton oscillator strength of 0.0046 for GaN. Luminescences between 3.29 eV and 3.37 eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface. Free excitons are captured by these centers within 20 ps. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2556-2558 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV (T=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron–phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II–VI compounds. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2547-2549 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AlN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A1(LO) phonon modes are observed in the wurtzite system. The presence of the very thin AlN buffer layer manifests itself in clear features of the AlN phonons. The A1(LO) phonon mode energy is determined in AlxGa1−xN for x≈0.15. Raman spectra confirm our findings. © 1996 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 572-580 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We predict stable geometrical structures and interaction energies of Ni clusters using non self-consistent electron density functional based corrected effective medium (CEM) and MD/MC-CEM methods. A plot of the reaction energies for the atomic ejection process, NiN+1→NiN+Ni, for Ni24–Ni55 displays a number of informative characteristics: (a) peaks and valleys represent internal structural rearrangement in which the number of core atoms increases by at least one and; (b) a plateau at N=50–54 is associated with the closing of the second MacKay icosahedron at Ni55. The lowest energy structures of NiN clusters for N=24–55 are dissimilar generally to those of both rare gas clusters and fragments of the bulk crystal lattice except where a stable icosahedral or bulk core is present. The growth scheme for N〈50 is determined by the stability and structure of the changing number of core atoms. By contrast, the growth scheme for 51≤N≤55 is determined by the addition of surface atoms to a very stable and invariant 13-atom icosahedral core. The theoretical predictions are compared to available model growth schemes and experimental data. © 1996 American Institute of Physics.
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