ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A appeared in both undoped and doped samples, but it disappeared after RTA for all the samples. It is suggested that band A is due to the formation of a complex involving VIn with residual impurities. The disappearance of band A after RTA is concomitant with the appearance of bands B, C and D. The existence of band B is attributed to the complex formation of VP with residual impurities. Band C was observed after the annealing process both in undoped and lightly-tin-doped samples and is believed to be due to the formation of VP single point defects. Band D was only observed in heavily doped samples and it is believed to be the effect of InP antisite defects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00186188
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