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  • 1
    Electronic Resource
    Electronic Resource
    Scanning Reactance Microscopy on organic materials (1997)
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 73-76 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract  Two types of modulation techniques based on Scanning Tunneling Microscopy (STM) were used to image the material contrasts of a plasma-polymer gold composite surface. The modulation of the tunneling voltage gives information on the complex local surface conductivity and the modulation of the tip sample distance allows the determination of work function and capacitance variations. Furthermore, calculations are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160050348
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of electrochemically etched tungsten tips for scanning tunneling microscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3970-3972 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Shape and composition of electrochemically etched tungsten tips for use in scanning tunneling microscopy (STM) were investigated in a transmission electron microscope (TEM) with a Gathan imaging filter (GIP). The tips are prepared by a lamella drop-off technique. We observe typical tip radii of less than 10 nm. After a storage of some days under ambient conditions, an amorphous oxide film is detectable. The electron energy-loss spectroscopy confirms that the surface is contaminated by compounds that contain carbon, too. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150022
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced local surface conductivity measurements by scanning tunneling microscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3104-3107 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A scanning tunneling microscope with a completely digital control is described which is able to determine in addition to the sample topography the local reactance of the surface by using a mathematical procedure. The new types of information allow a more detailed discussion of surface properties. The measurements were carried out at gold films on silicon wafers. On a plasma polymer gold composite surface typical reactance differences will be demonstrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148250
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  • 4
    Electronic Resource
    Electronic Resource
    A method for contact-free calibration of piezoelectrical actuators (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4738-4739 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The voltage-displacement-characteristics of tube-shaped piezoscanners were determined and used for the calibration of the scanning range of a scanning probe microscope (SXM). Inside a scanning electron microscope the displacements were measured as a function of the voltage and analysed by an imaging system. The detection of non-linearities as well as the investigation of the dynamic properties are possible. The method may be useful for various applications, e.g., all SXM instrumentation as well as micropositioning devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145318
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  • 5
    Electronic Resource
    Electronic Resource
    Nitrogen doping of tetrahedral amorphous carbon films: Scanning tunneling spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1619-1624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous nitrogenated carbon films with nitrogen atomic concentration between 12% and 29% were deposited using a filtered cathodic vacuum arc and a Kaufman-type ion source. The surface topography of the samples has been investigated by scanning tunneling microscopy in ultrahigh vacuum, showing that the roughness of the film surface decreases with nitrogen concentration. Scanning tunneling spectroscopy is employed to understand the role of nitrogen in the change of the surface microstructure and electronic structure near the Fermi level. The tunneling current (I)–bias voltage (V) curve is flat at low bias regions indicating a finite gap for the sample with low (12%) nitrogen concentration. An increase of tunneling current and its nonlinearity along with the decrease of energy gap occurs in the samples with increase of N concentration. The observed surface density of states [(dI/dV)/(I/V)] has been fitted as a square-root function of bias voltage. An improvement of the quality of these fits in the films with the increase of nitrogen concentration suggests that a depletion of defect density of states near the Fermi level (EF) takes place. These analyses could be attributed to the modification of the structure of amorphous carbon by a large concentration of nitrogen. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339854
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  • 6
    Electronic Resource
    Electronic Resource
    Detecting work-function differences in scanning tunneling microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2963-2965 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations of the work-function differences between tip and sample over distance have been investigated by a special procedure with a scanning tunneling microscope. This procedure allows the measurement of displacement current Ic dependencies on the voltage U. For a Pt tip on a Au surface and for a W tip on a Pt surface, work-function differences among 0, 2 and 0, 6 eV were found. They increase with increasing distance. From the slope of the Ic(U) characteristics in different distances, the diameter of the tip is estimated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123980
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  • 7
    Electronic Resource
    Electronic Resource
    Cathodoluminescence and writing of optical patterns on porous silicon by scanning electron microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2378-2379 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) imaging has been used to characterize thin layers of porous silicon. A system for cathodoluminescence (CL) mapping is built in a scanning electron microscopy and able to detect radiation from 350 to about 550 nm. The whole system is operated under a computer control giving the possibility to perform imaging in both secondary electron detection usual for scanning electron microscopy (SEM) and the cathodoluminescence mode. We have mapped inhomogeneous CL from the sample surface and modified the CL intensity by irradiation of the sample with the electron beam. A sample of porous silicon can be easily irreversibly patterned on a micrometer scale using such a focused controlled irradiation. Possible applications in optoelectronics will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116139
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  • 8
    Electronic Resource
    Electronic Resource
    Simple model for the topographic imaging process in a scanning tunneling microscope
    Amsterdam : Elsevier
    Ultramicroscopy 42-44 (1992), S. 200-205 
    Details
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(92)90267-N
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  • 9
    Electronic Resource
    Electronic Resource
    Scanning tunnelling microscopy investigations of organic thin film topography
    Amsterdam : Elsevier
    Thin Solid Films 188 (1990), S. 329-333 
    Details
    ISSN: 0040-6090
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0040-6090(90)90295-O
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  • 10
    Electronic Resource
    Electronic Resource
    Electron microscopic phase analysis of BN-thin films (1997)
    Springer
    Microchimica acta 125 (1997), S. 283-286 
    Details
    ISSN: 1436-5073
    Keywords: thin film deposition ; magnetron sputtering ; hard coatings ; boron nitride ; electron microscopy ; electron energy loss spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A series of BN films was deposited by means of r.f. magnetron sputtering of a h-BN target onto Si(1OO) surfaces. Hereby, the substrate bias voltage was varied. Special interest is focussed to the influence of the deposition parameters on the orientation of the growing hexagonal BN film with respect to the substrate. For structural investigation, cross section samples were prepared. In addition to HRTEM and diffraction investigations, especially electron energy loss spectroscopy (EELS) was applied successfully for phase identification. For negative bias voltages of U B =−300 V and U B =−350V, we found a phase system consisting of a first-grown 25 nm thick layer of hexagonal structure with the c axis parallel to the substrate surface followed by the cubic phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01246198
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