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  • 1
    Electronic Resource
    Electronic Resource
    Secondary grain growth and formation of antiphase domains in ordered Cu3Au thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2375-2379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalously large grains due to secondary grain growth in the ordered Cu3 Au thin film were observed by annealing the disordered thin film at 250 °C. No secondary grain growth was observed in the films annealed at 300 and 350 °C. The secondary grains have a preferred orientation of 〈111〉. Formation of antiphase domains with sizes larger than the normal grain size was found to accompany the growth of the secondary grains. Transmission electron microscopy showed that the coalescence of ordered grains contributed appreciably to the enlargement of secondary grains and antiphase domains. The driving forces of secondary grain growth and enhanced ordered domain growth are discussed on the basis of surface energy anisotropy and grain boundary migration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341669
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  • 2
    Electronic Resource
    Electronic Resource
    Wetting reaction versus solid state aging of eutectic SnPb on Cu (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4843-4849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction kinetics of eutectic SnPb solder on Cu were studied and compared in the liquid state at 200 to 240 °C and in the solid state aged at 125–170 °C. The ternary phase diagrams of SnPbCu, the morphology of intermetallic compound (IMC), and the kinetics of growth of the intermetallics were used in the comparison. The temperature difference between these two reactions is only 30 °C, but the kinetics of reaction, as well as the morphology of IMC formation, are very different. The kinetics in the wetting reaction is four orders of magnitude faster than that in solid state aging. The Cu6Sn5 intermetallic morphology in solid state aging is a layer type, but it has a scallop-type morphology in the wetting reaction. The morphology strongly affects the kinetics. While the kinetic difference can be attributed to the difference in atomic diffusivity between the liquid state and the solid state, it is the morphology that determines the kinetic path in these reactions. We conclude that a fast rate of reaction, which leads to a high rate of Gibbs free energy change, controls the reaction, not the Gibbs free energy change itself. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357469
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  • 3
    Electronic Resource
    Electronic Resource
    Surface segregation of Ba in polycrystalline YBa2Cu3O7 oxides: The effect of silver (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2126-2128 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of annealing polycrystalline YBa2Cu3O7−δ samples in a He ambient and in vacuum, on the composition of their internal surfaces. X-ray photoelectron spectroscopy (XPS) data indicate a decrease in the amount of BaCO3 but a higher proportion of Ba at the near-surface region upon low-temperature annealing in He or vacuum. The latter effect seems to derive from the presence of a surface barrier for oxygen outdiffusion, and can be prevented by diffusing Ag into the polycrystalline sample. Changes in the cutoff energies of the ultraviolet photoelectron spectra indicate that a submonolayer coverage of Ag is sufficient to produce a change in the work function of 0.3 eV, corresponding to the lowering of the surface barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102081
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  • 4
    Electronic Resource
    Electronic Resource
    Thermogravimetric study of the recovery of oxygen-deficient superconducting YBa2Cu3O7−δ oxides in ambient oxygen (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1351-1353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxides of oxygen-deficient YBa2Cu3O7−δ with δ(approximately-equal-to)0.32 in both powder and chunk form were annealed in ambient oxygen to investigate the behavior of oxygen indiffusion. Thermogravimetric measurements were used to monitor in situ weight gain during the annealing at constant heating rates between room temperature and 580 °C. The temperature for achieving a definite oxygen stoichiometry changes with the heating rates, which were varied from 0.1 to 15 °C/min. By measuring the rate dependence, the activation energy of oxygen diffusion in the powder oxide was determined to be 1.25±0.05 eV, in good agreement with the value obtained by previous resistivity measurements. However, the activation energy obtained from the chunk oxide is higher, i.e., 1.52±0.06 eV. A longer diffusion distance in the chunk oxide which requires diffusion across grains might be responsible for this discrepancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102474
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  • 5
    Electronic Resource
    Electronic Resource
    Interdiffusion in Thin Films (1985)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 15 (1985), S. 147-176 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.15.080185.001051
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  • 6
    Electronic Resource
    Electronic Resource
    Cracking behavior of xerogel silica films on silicon substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2944-2946 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis of the cracking behavior of sol–gel derived silica, "xerogel," films on silicon substrates is presented. At the onset of film cracking, xerogel films on 〈100〉 Si substrates show a crosshatched crack pattern, while such films on 〈111〉 Si substrates show a random pattern. This is explained by the fact that for an isotropic film the critical film thickness for cracking decreases for increasing substrate compliance. For a 〈100〉 Si wafer, the directions of highest compliance in the plane of the wafer are in the 〈100〉 directions, which lead to cracks in the film parallel to them. A 〈111〉 Si substrate is isotropic in the plane of the wafer and, hence, there is no preferred direction for film cracking. A random pattern is the result. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122638
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  • 7
    Electronic Resource
    Electronic Resource
    Finite-element modeling of stress distribution and migration in interconnecting studs of a three-dimensional multilevel device structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1516-1518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A finite-element method taking into account plasticity and temperature-dependent properties of materials was used to calculate the stress distribution in interconnecting studs of a three-dimensional multilevel device structure. A good correlation between the calculated locations of stress concentration and the experimentally observed failure sites was obtained. On the basis of this, the failure mechanisms associated with different stress components were inferred. In addition, the calculated locations of stress concentration were found to migrate as temperature changed. The phenomenon was also observed experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112029
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  • 8
    Electronic Resource
    Electronic Resource
    Finite-element stress analysis of failure mechanisms in a multilevel metallization structure (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3037-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A finite-element method taking into account material nonlinearity was used to calculate the stress distribution in interconnecting lines and studs of a three-dimensional multilevel metallization structure in a microelectronic device. A good correlation was obtained between the location of calculated stress concentration centers and the experimentally observed void sites in the stud. Accordingly, the failure mechanisms of the stress-induced voiding in the stud and the crack formation in the underlying substrate were inferred to be associated with different stress components. Furthermore, the stress concentration centers were found to migrate as the temperature changes, which agrees with the experimental observations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358653
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructural changes in confined submicrometer aluminum films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2575-2577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress effect on microstructure evolution in submicrometer Al dots in confinement has been studied by transmission electron microscopy. Direct observation of grain growth and void formation in the dots, unconfined as well as confined by sputtered quartz, was investigated. In the as-deposited state, most of the grains were larger than the film thickness of 300 A(ring), indicating that the grains have grown during the Al deposition and/or the quartz deposition. Voids were only found in the confined samples. Grain growth was retarded in the confined samples upon a stepwise annealing from room temperature to 400 °C, yet secondary grain growth occurred at temperatures above 500 °C. For the unconfined samples, abnormal grain growth occurred at 200 °C. The retardation of grain growth in the confined sample was attributed to the lack of stress gradient and vacancy sources and the hinderance of dislocation motion. The mechanism of secondary grain growth in the confined samples was observed to be the coalesence of adjacent grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353069
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  • 10
    Electronic Resource
    Electronic Resource
    In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4428-4437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high-resolution in situ SEM (scanning electron microscope) has been configured for real time comparison studies of the electromigration characteristics of Cu and Cu(Sn) alloys. Drift velocity test structures were fabricated and used to simulate the Cu line/W via structure in the multilevel interconnects. Electromigration comparison testings were carried out over a temperature range of 250 to 450 °C and current density of 5×105 to 2.1×106 A/cm2. Under these test conditions, the measured electromigration activation energy for Cu, Cu(0.5 wt %Sn), Cu(1.0 wt % Sn), and Cu(2 wt % Sn) are 0.73, 0.95, 1.25, and 1.14 eV, respectively. The measured critical length for Cu and Cu(Sn) alloys are (approximately-equal-to)2.5 μm at a current density of 2.1×106 A/cm2. The observed average drift velocity of Cu mass transport in Cu(Sn) alloys changes with the depletion of Sn atoms which were also found to move in the direction of electron current. Eventually, the Cu mass transport rate reaches a value comparable to that in pure copper test stripes. The measured resistivity values of the Cu(0.5 wt % Sn) and Cu(1 wt % Sn) using Van der Pauw test structures are 2.4 and 2.9 μΩ cm, respectively. In comparison with Cu and Al(Cu) device interconnects, Cu(Sn) alloys exhibits higher electromigration activation energy, good resistance to hillocks and void formation and comparable resistivity. These characteristics clearly indicate the fact that Cu(Sn) alloys are potentially good candidate for advanced device interconnect applications where high-current density and good electromigration resistance are required. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359851
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