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  • 1
    Unknown
    Boston, MA : Springer US
    Keywords: Chemistry ; Chemistry, inorganic ; Nanotechnology ; Surfaces (Physics)
    ISBN: 9780387787015
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4382-4389 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A closed-form solution for diffusion in two dimensions is obtained for impression creep of a thin film by a straight punch. The results show that for a rigid impermeable substrate the penetration rate is proportional directly to the thickness of the film and inversely to the square of the punch width. Without the substrate the penetration rate is inversely proportional to the thickness of the film and independent of the punch width.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7751-7756 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impression test of a Newtonian fluid under a constant load and for a small Reynolds number flow was simulated by using the finite element method. It is found that the penetration velocity is a constant if the surface tension/viscosity ratio is less than 0.1 cm/s, the product of surface tension and indenter radius is less than 0.05 of the applied load, and the penetration depth is less than 1/3 of the indenter radius. Such constant penetration velocity is proportional to the applied load and inversely proportional to the viscosity and the indenter radius. The stick or slip boundary condition at the interface between the indenter and the fluid has no effect on the penetration velocity under these conditions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 110-117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some diffusion problems in the impression and diffusional creep of anisotropic materials are analyzed. It is found that at the limit of low stress, both the diffusional creep rate and impression velocity are proportional to the applied stress. For a parallelepiped crystal under simple tension or compression in the Z direction, the diffusional creep rate depends on all three principal diffusivities, DX, DY, and DZ. Two limiting cases depend on the quantity (square root of)DXDY/DZ. When this quantity is large the creep rate is proportional to (square root of)DZ but when it is small the creep rate is independent of DZ. For a cylindrical crystal under tension or compression in the axial Z direction, the creep rate depends on Dr/DZ. When the ratio is large, the creep rate is the same as the isotropic case except that the effective diffusivity is (square root of)DrDZ. When the ratio is small, the creep rate is proportional to Dr and independent of DZ. For the impression creep of a half-space the punch velocity is proportional to the geometric mean of the principal diffusivities parallel and perpendicular to the loading direction, and inversely proportional to the punch dimension. For impression creep of a thin film deposited on an impermeable substrate under the same punching stress, the impression velocity is dependent only on the diffusivity parallel to the thin film, and inversely proportional to the square of the punch dimension. Without the substrate, the impression velocity is dependent only on the diffusivity perpendicular to the thin film, inversely proportional to the thickness of the film, and independent of the punch dimension. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4390-4397 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion problem in the impression creep of a thin film by a cylindrical punch is analyzed. It is found that at low stresses the impression velocity is proportional to the punching stress. For the same punching stress and the same punch radius the impression velocity decreases for a rigid substrate, and increases without the substrate as the thickness of film decreases. Two limiting cases for the rigid substrate agree with the previous work, namely, the impression velocity is inversely proportional to the punch radius for impression creep of a half-space, and inversely proportional to the square of the punch radius for impression creep of a thin film. Without the substrate the impression velocity for impression creep of a thin film is inversely proportional to the thickness of the film and independent of the punch radius.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 959-961 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contact stiffness widely used in nanoindentation test is based on the Hertzian contact theory for zero-interfacial friction (slip boundary condition), in which the effect of adhesion energy is ignored. However, in the real situation, the adhesion energy may not be negligible when the contact is adhesive. A solution of the contact stiffness is derived by using adhesive contact theory for both frictionless condition (the famous Johnson–Kendall–Roberts theory) and the sticky condition. The results show that the nominal contact stiffness depends on the adhesion energy and indenter size as well as the load applied to indenter. For a large size of indenter and small load, the adhesion energy controls the contact process; while for a large load, the elastic deformation dominates, in which the nominal contact stiffness approaches the result based on the Hertzian contact theory. © 2002 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4816-4822 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dislocation model of a subsurface crack parallel to the surface is presented. For tensile loading, the results agree with those of previous workers except that we studied the crack very close to the surface and found that KII (mode II stress intensity factor) approaches KI (mode I stress intensity factor) to within about 22% (KII=0.78KI). (Note that KII is zero when the crack is far away from the surface). Using bending theory for such situations, it is found that both stress intensity factors are inversely proportional to the 3/2 power of the distance between the subsurface crack and the free surface. For shear loading, the crack faces overlap each other for the free traction condition. This indicates the failure of the model. However, there was no overlap for tensile loading even though the stresses in front of the crack oscillate somewhat when the crack is very close to the surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6188-6191 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While the same atomic mechanism is usually assumed in both viscous flow and diffusion in a liquid, viscous flow is found much faster (by many orders of magnitude) in all situations studied where the mass transfer is caused by pressure gradients. A detailed study shows that Fick's law must be modified for self-diffusion in liquids. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 475-479 (Jan. 2005), p. 425-428 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The localized deformation behavior of annealed Al and Al severely deformed by ECAE process was determined by using microindentation test. Using the method proposed by Tabor, the indentation stress-strain curves of annealed Al and as-ECAE deformed Al were constructed, which display similar work-hardening behavior. For annealed Al, the altitude of the indentation stressstrain curves is a function of the indenter size. A master curve then is constructed, which displaysdifferent work-hardening behavior. For the ECAE deformed Al, the indentation stress-strain curves are independent of the indenter size, suggesting that the microstructure inside the as-ECAE deformed Al is different from the annealed Al
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    International journal of fracture 77 (1996), S. 337-350 
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The problem of a subsurface crack parallel to the surface of a half space was studied by the finite element method. Without using the interface or gap elements over the crack faces, the crack faces would penetrate into each other for the traction-free boundary condition under shear loading, which is physically impossible. Using the gap elements, this problem was avoided, and a contact zone was observed near one crack tip. The size of the contact zone decreases but the maximum contact pressure at the closed crack tip increases as the crack approaches the surface. For tensile and shear loadings, both K I (mode I stress intensity factor) and K II (mode II stress intensity factor) increase as the crack approaches the surface. For shear loading there is no K I at the closed tip and the K I and K II at the open tip are comparable as the crack approaches the surface.
    Type of Medium: Electronic Resource
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