ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Partially stabilized ZrO2-Y2O3 films (PSZ) were deposited using an r.f.-diode cathode sputter deposition system. The variation of film structure according to changes in the deposition parameters is described. The results show that the oxygen concentration of the oxygen-argon sputtering gas used for deposition of PSZ films can be used to control the microstructure of the films and their roughness. We found the optimal oxygen concentration to be 10%, resulting in a dense and homogeneous structure within the film, and a smoother surface. At the optimal oxygen concentration of 10% the refractive index and the absorption coefficient of the films showed a clear maximum and minimum, respectively. We consider that addition of oxygen to neutral argon sputtering gas both decreases the sputtering yield and increases the substrate bombardment by neutral oxygens.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00553840
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