Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 3218-3220
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Self-assembled C-induced Ge dots are islands which are not formed by the Stranski–Krastanov mode of growth. They are formed by a three-dimensional mode originating from the undulating strain fields of the C alloyed Si (100) surface. This opens additional possibilities to control the size and the shape of these dots by modifying the strain fields of the C-alloyed Si surface. Here, we show that the amount of C deposited prior to the growth of the Ge islands strongly effects the diameter and height of the dots. Increasing the C coverage to 0.3 monolayer leads to the formation of comparably compact islands. Consequently, the photoluminescence of the dots is shifted to lower energies compared to dots grown with lower C coverages. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1326033
Permalink
|
Location |
Call Number |
Expected |
Availability |