ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 143-147 (Oct. 1993), p. 1397-1402 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 19 (1983), S. 0 
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: A study was made to determine if Seasat Synthetic Aperture Radar (SAR) data could be used to make practical estimates of soil moisture. Extensive ground measurements were collected at two primary sites near Guymon, Oklahoma, and Sublette, Kansas. The relative sensitivity of the SAR to differences in soil moisture, tillage roughness, and vegetation was determined. To validate the effects detected in the SAR data, an airborne scatterometer with a similar wavelength was flown repeatedly over the Guymon site.Soil moisture variations in the surface 2 cm and surface 15 cm of fields with bare soil, milo and alfalfa produce similar responses in the scattering coefficient from both systems. Roughness due to tillage in row crops produced as much as 12–15 dB increase in the scatterometer return. Most agricultural vegetation was effectively penetrated by the L-band frequencies; however, corn produced an exceptionally high radar return either standing or after combine harvesting. When corn had ripened, there was some evidence that tillage roughness could be detected through the canopy. Moderate tillage roughness produced by grain drill furrows caused over 12 dB increase in return when row directions changed from parallel to perpendicular with respect to the SAR look direction. Dramatic increases in return occurred when vegetation surfaces were wet. Increased radar returns from tillage roughness, some vegetation and wet vegetation surfaces, all dyanmic in nature, were significant and may limit the practical estimation of soil moisture from the radar data.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Molecular and Cellular Probes 6 (1992), S. 423-429 
    ISSN: 0890-8508
    Keywords: DNA probe ; Mycoplasma hyopneumoniae ; detection ; hybridization ; swine enzootic pneumonia
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 14 (1978), S. 0 
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : Aircraft Observations of the surface temperature were made by measurements of the thermal emission in the 8-14 μm band over agricultural fields around Phoenix, Arizona. The diuranal range of these surface temperature measurnments were well correlated with the ground measurment of soil moisture in the 0-2 cm layer. The surface temperature indicating no moisture stress. These results indicate that for clear atmospheric conditions remoteley sensed sufrace temperatures can be a reliable indicator of soil moisture conditions and crop status.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4009-4016 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1×1017 to 1×1019 cm−3 are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the Zn diffusion-induced disordering process. After Zn diffusions at 575 °C for 4 and 16 h, the structures are investigated by secondary-ion-mass spectrometry, and by transmission electron microscopy on cleaved wedges of the sample. The results show that the totally and partially disordered regions are always behind the Zn diffusion front. A dependence of the effective Zn diffusivity and of the disordering rate of the structures on the background Si-doping level is observed. The effective Zn diffusivity and the disordering rate are significantly reduced with increasing background Si concentration. Before Zn diffusion, photoluminescence spectra of the Si-doped MQW structures exhibit an increase in intensity of the Si donor–column-III vacancy complex emission band with increasing Si-doping level. This indicates that the concentration of column-III vacancies in the MQW structures increases as the background Si concentration increases. After Zn diffusion, an important decrease in intensity of the column-III vacancy related emission band is observed on the photoluminescence spectra taken in the Zn-diffused regions.The systematical analysis of the photoluminescence spectra of the Zn-diffused MQW structures as a function of diffusion time and as a function of etching depth below the sample surface makes it possible to describe the physical processes occurring during Zn diffusion. A model based on the "kick-out'' mechanism of Zn diffusion is proposed to explain the effect of the background Si-doping level on the effective Zn diffusivity. The model shows that the effective Zn diffusivity is controlled by the concentration of column-III interstitials behind the Zn diffusion front and by the donor concentration in the sample. During the incorporation of Zn into the crystal lattice, column-III interstitials are generated. The supersaturation of these interstitials behind the Zn diffusion front is responsible for the enhancement of Al–Ga interdiffusion. Since column-III interstitials and column-III vacancies can mutually annihilate, the concentration of column-III interstitial and column-III vacancy in the Zn-diffused region is reduced with increasing Si-doping level, leading to a retardation of Zn diffusion into the MQW structure. On the other hand, a decrease of the effective Zn diffusivity caused by an increase in donor concentration in the samples is also demonstrated.Our results give evidence for the Fermi-level effect and the interactions between different point defects during Zn diffusion-induced disordering of GaAs/AlGaAs multilayered structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs/AlxGa1−xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x≈0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering mechanism. The disordering of the structures is observed directly by transmission electron microscopy on cleaved wedges of the sample, by the secondary electron imaging mode of scanning electron microscopy, and by secondary-ion-mass spectroscopy after Zn diffusions at 575 °C during different times (1, 4, 9, and 16 h). The results show that the totally and partially disordered regions are always behind the Zn diffusion front. The partially disordered extent depends on x. As x increases, the disordering rate increases due to the increase in Zn diffusivity. The effect of high Zn concentration is investigated by photoluminescence and by Raman scattering measurements. The systematical analysis of the photoluminescence spectra of the MQW structures diffused for different times and of the photoluminescence spectra taken on different depths below the sample surface makes it possible to describe the physical processes occurring during Zn diffusion. The column-III vacancies are created at the sample surface. They diffuse into the bulk of the sample where they are filled by other defects. Using the x-ray-diffraction technique, an expansion of the lattice constant in the region behind the Zn diffusion front was observed. This is due to a supersaturation of column-III interstitials. During the incorporation of Zn into the crystal lattice, column-III interstitials are generated. These interstitials could be responsible for the enhancement of the Al-Ga interdiffusion. The important role of the electric field at the p-n junction formed by Zn diffusion is discussed. The negatively charged column-III vacancies and the positively charged column-III interstitials are confined, respectively, on the n and p sides of the p-n junction. The results give evidence for the self-interstitial mechanism of Zn diffusion-induced disordering in GaAs/AlGaAs MQW structures.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5493-5500 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After Zn diffusion into Si-doped GaAs (n≈1.5×1018 cm−3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration profiles obtained by secondary-ion-mass spectroscopy and the photoluminescence (PL) spectra taken at different depths below the sample surface are studied in detail. After annealing in vacuum, the steep (p+-n) Zn diffusion front advances into the bulk. We observe that the intensity ratio between the Si donor-gallium vacancy complex (SiGa-VGa) related emission band and the band-to-band (e-h) transition is enhanced in the region ahead of the Zn diffusion front. In contrast, Zn atoms diffuse deeper into the bulk of the samples annealed in arsenic vapor with or without capping layer. These samples show the kink-and-tail (p+-p-n) Zn concentration profiles with a decrease in the intensity ratio around the tail region. The analysis of the PL data suggest a supersaturation of gallium vacancies ahead of the diffusion front of the sample annealed in vacuum and an undersaturation of this defect around the tail region of the samples annealed in As vapor. Our results underline the important role of the nonequilibrium of the defect concentration during the postdiffusion annealing, which permits explanation of the anomalous double profile of Zn by the interstitial-substitutional mechanism.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 965-967 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The successful n-type doping of CdTe and CdZnTe alloys by using iodine as a dopant is reported. For CdTe, doping levels as high as 6.2×1018 cm−3 can be obtained with carrier mobility around 500 cm2 V−1 s−1 at room temperature. An ionization energy of 14.8 meV has been determined for the shallow donor by Hall effect measurements. In the case of Cd1−xZnxTe ternary alloys, only a slight decrease in the carrier density is observed when increasing the Zn concentration, by contrast to doping with indium. The doping level of 5×1017 cm−3 can be achieved for a Zn concentration x as high as 0.25, demonstrating the higher efficiency of iodine doping as compared to indium doping. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 0022-4731
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    International Journal of Mass Spectrometry and Ion Physics 45 (1982), S. 35-49 
    ISSN: 0020-7381
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...