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  • 1
    Electronic Resource
    Electronic Resource
    Volatile marking secretions from the labial gland of north Europeanpyrobombus D. T. males (Hymenoptera, Apidae) (1977)
    Springer
    Insectes sociaux 24 (1977), S. 213-224 
    Details
    ISSN: 1420-9098
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Description / Table of Contents: Résumé Les sécrétions volatiles de la glande labiale chez les bourdons mâlesBombus Latr., appartenant au sous-genrePyrobombus D. T., ont été étudiées chez six espèces:B. cingulatus Wahlb.,B. hypnorum L.,B. jonellus K.,B. pratorum L.,B. lapponicus Fabr. etB. scandinavicus Friese. Au total, 181 spécimens ont été analysés. Les sécrétions, qui servent à marquer différents objets sur le trajet du vol territorial, ont été soumises à la chromatographie en phase gazeuse (colonne capillaire) et à l'analyse combinée par chromatographie en phase gazeuse et spectrométrie de masse. Les sécrétions sont composées d'isoprénoïdes et de dérivés d'acides gras. Les isoprénoïdes sont les composés dominants, sauf chez l'espèceB. scandinavicus. Les compositions des sécrétions sont caractéristiques pour chaque espèce.
    Notes: Summary The volatile secretions produced by the labial gland in male bumble-bees,Bombus Latr., belonging to the subgenusPyrobombus D. T., have been studied in six species:B. cingulatus Wahlb.,B. hypnorum L.,B. jonellus K.,B. pratorum L.,B. lapponicus Fabr. andB. scandinavicus Friese. Totally, 181 specimens have been analyzed. The secretions, which are used for marking different objects along the flight-route, have been analyzed by capillary gas chromatography and combined capillary gas chromatography/mass spectrometry. Isoprenoids and fatty acid derivates together make up the secretions. The former group of compounds dominates the marking secretions from the species studied, with the exception ofB. scandinavicus. The compositions of the secretions are characteristic for each species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02227172
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation of silicon by low energy oxygen bombardment (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1840-1846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution Rutherford backscattering and channeling has been used to study the formation of surface oxides during room temperature bombardment of silicon with oxygen in a secondary ion mass spectrometry system. Stoichiometric SiO2 is formed at angles of incidence (to the surface normal)≤25° and the angular dependence is adequately modeled using the profile code. A linear dependence of oxide thickness on energy is obtained in the energy range 3–40 keV (per oxygen ion) and this is consistent with trim code calculations. The suboxide damage has also been measured and studied during annealing. Our data are consistent with a simple model of oxygen build up and formation of strong Si–O bonds during room temperature bombardment. Once a buried SiO2 layer is reached and Si bonds are saturated, oxygen can migrate in SiO2 to extend the oxide towards the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357704
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  • 3
    Electronic Resource
    Electronic Resource
    Isotope effects for mega-electron-volt boron ions in amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4836-4840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth profiles of 10B and 11B implanted into amorphous silicon have been analyzed by secondary ion mass spectrometry. Implantation energies between 0.4 and 5.0 MeV were used, and each sample was sequentially implanted with both 10B and 11B without changing the acceleration voltage but only the field in the mass analyzing magnet. A shift between the two profiles is clearly resolved and has been carefully studied as a function of ion energy. A maximum shift of 3.5% in mean projected range (Rp) is revealed at 0.6–0.8 MeV [Rp(11B)≥Rp(10B)], and for higher energies the ratio Rp(11B)/Rp(10B) decreases slowly to a value of ∼1.006 at 5.0 MeV. This reverse shift (heavier isotope penetrates deeper) is attributed to a larger electronic stopping cross section (Se) for 10B than for 11B at a given energy E where Se∼Ep and p≥0. The experimental data for Rp(11B)/Rp(10B) and Rp(11B) are compared with calculations, and it is demonstrated that the variation of Rp(11B)/Rp(10B) with ion energy hinges strongly on the Se vs E dependence. A close velocity proportional dependence (p=0.50±0.03) is found to be valid up to ∼300 keV, and then p decreases gradually with a maximum in Se (p=0) at ∼2.0 to 2.5 MeV. A semiempirical expression is presented for Se and shown to yield excellent agreement with both the relative isotope shift and the absolute range values; the deviations are less than 0.2% and 3.0%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353798
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  • 4
    Electronic Resource
    Electronic Resource
    On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 762-768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of titanium during the formation of epitaxial CoSi2, grown from the reaction of Co(20 nm)/Ti(10 nm) bilayers with Si 〈100〉, has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050 °C, is shown to be associated with the growth of an inhomogeneous CoSi2 layer having Ti-rich surface layer(s) on top. The formation of inhomogeneities in the CoSi2 layer is conclusively attributed to the presence of Ti-rich surface layer(s). It is shown that smooth and morphologically stable CoSi2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi2 layer and Ti-rich phases near the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362884
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  • 5
    Electronic Resource
    Electronic Resource
    Heavy doping effects in the diffusion of group IV and V impurities in silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 691-698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of the diffusion of Ge, Sn, As, and Sb in Si at high donor concentrations provided by phosphorous doping have been performed. It is found that for donor concentrations, CD below ∼2×1020 cm−3, the diffusivity depends linearly on CD; for doping concentrations above ∼2×1020 cm−3, however, the diffusivity increases dramatically with increasing donor concentrations. This behavior has been successfully modeled within the vacancy–percolation model, and it is concluded that collective phenomena play a significant role at high donor concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353324
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  • 6
    Electronic Resource
    Electronic Resource
    Surface recession and oxidation of silicon during bombardment by low energy oxygen ions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3831-3834 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical expansion of a silicon surface bombarded by 10 keV O+ ions is demonstrated using surface stylus profilometry. The surface expands gradually as the incorporated oxygen concentration increases, and a maximum is obtained when the bombardment dose reaches the critical one for formation of a continuous surface layer of SiO2. Through a combination of crater depth measurements and chemical etching the surface recession and the incorporation of oxygen are monitored as a function of bombardment dose. Comparison is made with calculations based on a model where simultaneous sputter erosion and surface swelling are taken into account. The surface swelling is assumed to be proportional to the retained oxygen dose. Experimentally determined sputtering yields are utilized in the calculations, and good agreement is shown with the measured data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357386
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  • 7
    Electronic Resource
    Electronic Resource
    Interaction between copper and point defects in proton-irradiated silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4212-4216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier structures have been formed by the deposition of Cu and Pt on n-type Si(100) at room temperature. The structures were irradiated by 300 keV protons or 1.3 MeV alpha particles to doses between 109 and 1010 cm−2. Deep level transient spectroscopy measurements performed in the temperature range 80–290 K revealed a new level ∼0.31 eV below the conduction band edge in the proton-bombarded Cu/Si(100) samples. The level exhibits metastable properties, and reversible cycling of its strength can be accomplished by a procedure where thermal annealing, forward biasing (hole injection), and white light excitation are undertaken. Evidence is presented showing that the level is associated with both Cu and H. Furthermore, the production rate of electrically active defects, e.g., divacancy and vacancy oxygen centers, is found to be substantially lower in the Cu/Si(100) samples compared with Pt/Si(100) samples irradiated under identical conditions. This is attributed to passivation of the irradiation-induced acceptor centers by fast diffusing interstitial Cu+, and in particular, the effect is more pronounced at shallow depths close to the Cu/Si interface than in the deep tail beyond the implantation peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350800
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  • 8
    Electronic Resource
    Electronic Resource
    Overlapping electron traps in n-type silicon studied by capacitance transient spectroscopy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1699-1704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In n-type Czochralski-grown silicon samples, a broad unidentified level is observed ∼0.32 eV below the conduction band after high-energy electron irradiation. This level has been investigated in detail using deep-level transient spectroscopy and capacitance-versus-time measurements. The broad level consists of two overlapping but independent peaks which are clearly resolved. The generation rate of these peaks, as a function of bombardment dose and as a function of sample depth, as well as their annealing kinetics has been investigated. The identities of the overlapping peaks are discussed, and our findings are compared with optical and electron paramagnetic resonance (EPR) measurements performed by other authors. In particular, the importance of performing depth profiling when identifying unknown peaks is emphasized. One level is tentatively assigned to a gold-related complex, while the other shows several similarities with the EPR G15 center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344389
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  • 9
    Electronic Resource
    Electronic Resource
    Boron implantation in silicon: Isotope effects studied by secondary ion mass spectrometry (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 73-77 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range distributions of 10B+ and 11B+ ions implanted into silicon have been studied by secondary ion mass spectrometry. Implantation energies in the range of 50 to 250 keV were used. An isotope effect on the boron profiles is clearly resolved for the energies above ∼100 keV. Projected range and parallel straggling values extracted from the measured profiles are compared with calculated values obtained from Monte Carlo simulations and from numerical computations applying Boltzmann's transport equation. A good agreement is found, and also the computed values reveal a clear isotope dependence. This effect is attributed to a larger electronic stopping cross section Se for the 10B+ ions than for the 11B+ ions at a given energy in the range where Se is roughly proportional to the ion velocity. 5
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347097
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  • 10
    Electronic Resource
    Electronic Resource
    Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2148-2152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n junctions formed by vacuum evaporation of silicon on crystalline silicon have been investigated. The junctions were formed by ion implantation of 49BF+2 in the evaporated silicon films. Subsequently, an isochronal heat treatment in the range of 600–850 °C was performed and its influence on the doping distributions and corresponding diode behavior was studied. Secondary-ion mass spectrometry was used to investigate the resulting boron distributions. A sharp decrease in the boron concentration was found at the interface for the sample annealed at 850 °C.The fabricated p-n junctions were evaluated by measuring the current-voltage characteristics. Comparisons were made to ordinary diffused p-n junctions in bulk silicon. Using the current-voltage measurements, the leakage current and the ideality factor of the diodes were extracted. The reverse currents were also measured and show a nonsaturating behavior. The resistivity of the films were investigated as a function of anneal temperature, and it was found that the boron in the films is effectively activated for heat treatments 〉700 °C. An estimation of the hole mobility in the films was made from the measured resistivity and doping distributions. The annealed structure was investigated with transmission electron microscopy. The heat treated films were found to be polycrystalline with very small grains (〈250 A(ring)). To demonstrate the usefulness of this technology, a junction field-effect transistor with evaporated gate diode was fabricated. The performance of this transistor is also demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345550
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