ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial GaAs layers were grown by metalorganic chemical vapor deposition on Si-on-insulator structures formed by high dose oxygen implantation. The quality of the GaAs films was examined as a function of layer thickness (0.01–4 μm). The surface morphology, ion backscattering yield, x-ray diffraction peak width, and Si implant activation efficiency all improve substantially with GaAs thickness. At a film thickness of 4 μm many of these properties are comparable to bulk GaAs, but some cracking of the epitaxial film is evident. Cross-sectional transmission electron microscopy reveals an average defect density of ∼108 cm−2 in the GaAs layer, which is similar to the density in GaAs films grown directly on Si.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98728
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