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  • 1
    Electronic Resource
    Electronic Resource
    Static Disorder in Si〈sub〉1-x〈/sub〉Ge〈sub〉x〈/sub〉 Alloys and in Silicon on Insulator Structures (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 203 (Feb. 1996), p. 217-222 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.203.217.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of Aluminium Ion Implantation Damage into 6H-SiC Epilayers (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 733-736 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.264-268.733.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5958-5964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiempirical models of electronic energy loss and damage formation for MeV ions (B, P, As) implanted in silicon at room temperature were investigated through the comparison of measurements with Monte Carlo simulations of both impurity and damage depth distributions. Accurate prediction of dopant profiles in an amorphous target and in a low-dose implanted crystal is achieved by a proper parametrization of well known analytic stopping models. Moreover, to accurately describe the dynamic effects of damage accumulation in medium dose implants, a dependence on ion energy of the efficiency parameter used in the Kinchin–Pease (KP) model must be introduced in the simulation. Such a factor, determined by the fit of the measured integral of defect profiles, is found to decrease for P and As ions with increasing the nuclear energy released to primary recoil atoms, apparently reaching a saturation value of about 0.25. Full cascade simulations show that the increasing fraction of the primary recoils energy spent in electronic processes, not considered in the simple KP approximation, cannot explain the observed trend. While the empirical adjustment of damage efficiency leads to a good agreement between simulated and experimental dopant profiles, a systematic underestimate in the depth position of the peaks of simulated damage distributions is observed, which cannot be accounted for by simple ballistic transport effects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366498
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of defects produced during self-annealing implantation of As in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2708-2712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several electron microscopy techniques were used to investigate in detail the structure of the defects produced by implantation of Si with high current density As+ ion beam under self-annealing conditions (i.e., with simultaneous damage recovery activated by the transient beam heating). The defects, which display a basic octahedral shape, appear if the irradiation is prolonged after the time for which the transient beam heating has produced the complete crystallization of the previously amorphized surface layer. With increasing irradiation time and temperature they grow up to a maximum diameter of about 20 nm, and concentrate in a band located around the position of the maximum of nuclear energy loss of As+ ions, where a segregation peak of electrically inactive As is developed simultaneously. The results of different microstructural and microanalytical techniques used to investigate the defects (conventional and high resolution electron microscopy, electron holography, and energy dispersion x-ray microanalysis) give information which leads us to identify them as large vacancy aggregates, or voids, with As atoms segregated in proximity of the inner surfaces. The role of As atoms is likely to reduce the strain energy which a vacancy aggregate is expected to produce in the surrounding lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346444
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  • 5
    Electronic Resource
    Electronic Resource
    Anomalous distribution of As during implantation in silicon under self-annealing conditions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2940-2946 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous distribution of As implanted in silicon under self-annealing conditions (i.e., with simultaneous damage recovery activated by beam heating) has been investigated and discussed. Rutherford backscattering/channeling, transmission electron microscopy, and carrier profiling techniques have been used to analyze the dopant profiles and the microstructure of samples irradiated with 150-keV As+ ions at a current density of (approximately-equal-to)207 μA/cm2, for times of 2, 3, 4, 5, and 6 s. Two relevant effects are observed. The first one consists in the formation of two dopant peaks, electrically inactive, separated by a depletion region at the position of the ion projected range. While the deeper peak disappears with increasing irradiation time, the one located at the maximum of nuclear energy loss grows. Microstructural analysis suggests that both peaks occur as a result of As segregation at lattice defects; in particular, the one located the position of the maximum of nuclear energy loss is the consequence of segregation of As atoms at voids, which are formed during irradiation at elevated temperature. The second relevant effect is the formation of a deep penetrating tail in the As profile, which cannot be explained by a simple thermal diffusion mechanism. Although the contribution of channeling effects cannot be ruled out, the effect seems to be mainly related to a diffusivity enhancement, weakly temperature dependent, due to the interaction of the dopant with radiation-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344174
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  • 6
    Electronic Resource
    Electronic Resource
    Damage profiles in high-energy As implanted Si (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3993-3999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep distributions of lattice disorder induced in Si by room temperature, high-energy (3 MeV), nonamorphizing As ion implants have been characterized by Rutherford backscattering spectrometry channeling (RBS-C), double crystal x-ray diffractometry (DCXD), and cross-sectional transmission electron microscopy (XTEM). After accurate calibration of the measurement conditions, the depth positions of the profiles of displaced atoms, lattice strain, and XTEM weak-beam dark-field contrast in a sample implanted at a dose of 1014 As cm−2 agree within 3%. This confirms that the quantities measured by the three techniques have a similar qualitative correlation with the depth profile of as-implanted damage. The shape of the disorder profiles indicates different rates of damage accumulation as a function of depth, which have been characterized by a series of DCXD measurements at doses in the range 1012–1014 As cm−2. The problem of a quantitative determination of the number of defects is also addressed. In particular, the result of RBS-C, which gives as output the concentration of displaced atoms, is sensitive to the configuration of damage assumed when fitting experimental spectra. As a consequence, to give a reliable estimate of defect number a more refined microstructural model of damage (including, for instance, the deformation induced in the background lattice by heavily displaced atoms) should be used within the simulation of the measurement process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290712
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  • 7
    Electronic Resource
    Electronic Resource
    Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8461-8466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of defects injected by room temperature, high-energy implantation of Si and As ions on the diffusion of Sb marker in Si is investigated. MeV ions induce transient enhanced diffusion (TED) of ion implanted Sb, which increases with increasing the vacancy supersaturation generated in the Sb-doped region by the knock-on recoil mechanism. TED lasts a few minutes for annealing at 800 and 900 °C. The results indicate that at these temperatures the buildup and decay of vacancy supersaturation in the near-surface region occurs on a shorter time scale than the release of interstitials from the buried damage layer. The dominant role of vacancies is also indicated by the very low TED observed in B-doped samples processed under similar conditions. For 1000 °C annealing some effect of the retardation induced on Sb diffusion by interstitials flowing from the deep region is found after 15 min annealing. Preliminary results of defect injection by nonamorphizing medium-energy implants indicate that a smaller, yet nonvanishing, effect of Sb TED persists even under conditions where B diffusivity is strongly enhanced. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373564
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  • 8
    Electronic Resource
    Electronic Resource
    Ion implantation induced swelling in 6H-SiC (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3425-3427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV Al+ ions in the dose range 1.25×1014–3×1015 ions cm−2. Swelling was related to dose and the area density of ion-induced damage measured by Rutherford backscattering channeling technique. The observed trend is consistent with the hypothesis that the volume expansion of the ion damaged crystal is proportional to the area density of displaced atoms, plus an additional relaxation occurring at the onset of the crystalline to amorphous transition. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119191
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  • 9
    Electronic Resource
    Electronic Resource
    Electron spectroscopic imaging of dopant precipitation and segregation in silicon
    Amsterdam : Elsevier
    Ultramicroscopy 35 (1991), S. 265-269 
    Details
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(91)90078-K
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  • 10
    Electronic Resource
    Electronic Resource
    Self annealing effects in P^+ implanted silicon
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 19-20 (1987), S. 475-479 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0168-583X(87)80094-0
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