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  • 1
    Electronic Resource
    Electronic Resource
    Genotypic relationships between Prochloron samples from different localities and hosts as determined by DNA-DNA reassociations (1985)
    Springer
    Archives of microbiology 142 (1985), S. 340-341 
    Details
    ISSN: 1432-072X
    Keywords: Prochloron ; DNA-DNA reassociation ; Didemnid ascidians ; Taxonomy ; Genotypic relationships
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Genotypic relationships between seven Prochloron samples isolated from different didemnid ascidian hosts collected at the Palau archipelago and Munda (Solomon Islands) and one cyanobacterial (Synechocystis) strain were determined by DNA-DNA reassociations. Thermal stability values of DNA-DNA hybrids indicate that all Prochloron samples involved are mutually very closely related and only slightly related with the Synechocystis strain. It is concluded that the Prochloron samples tested are representatives of one and the same species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00491900
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  • 2
    Electronic Resource
    Electronic Resource
    Thermodynamic Properties and Optical Characterization of Metal Nanoparticles in Dielectric Matrix (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 195 (Nov. 1995), p. 161-166 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.195.161.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 83-87 (Jan. 1992), p. 1069-1074 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.83-87.1069.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystal (1988)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 979-988 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties and materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si riportano e discutono misure di riflettanza ed elettroriflettanza, nell'intervallo (2.5÷5.5) eV, eseguite sui campioni di silicio pesantemente drogato con arsenico. I campioni di silicio, impiantati con arsenico fino a una dose di 1017cm−2, sono stati sottoposti a laser annealing e sono state raggiunte concentrazioni di portatori liberi dell'ordine di 1021cm−3. Il riordinamento del sistema è studiato in dettaglio in corrispondenza a diverse condizioni iniziali e un confronto fra riflettanza ed elettroriflettanza appare molto utile per determinare il comportamento di un semiconduttore pesantemente drogato.
    Abstract: Резюме Приводятся и обсуждаются результаты измерений отражения и электроотражения в области от 2.5 до 5.5 эВ на образцах кремния, сильно легированных мишьяком. Кристаллы кремния, имплантированные мышьяком с флуенсом 1017cm−2, облучаются лазером и концентрация свободных носителей достигает порядка 1021cm−3. При различных началыных условиях подробно исследуется переупорядочение системы. Сравнение отражения и электроотражения оказывается поленым для определения поведения сильно легированных полупроводников.
    Notes: Summary Reflectance and electroreflectance measurements from 2.5 to 5.5 eV, performed on arsenic heavily doped silicon samples, are reported and discussed. Silicon crystals implanted with arsenic up to a fluence of 1017 cm−2 were laser irradiated and a free-carrier concentration of the order of 1021cm−3 was reached. The reordering of the system is studied in detail at different initial conditions. A comparison between reflectance and electro-reflectance appears to be quite useful to determine the behaviour of the heavily doped semiconductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450198
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of doping in Si crystals by means of electroreflectance (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1526-1540 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties and materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si mette in evidenza l'importanza dell'elettroriflettanza in due applicazioni specifiche riguardanti studi di superfici di semiconduttori: i) determinazione di profondità di giunzione e profili della densità dei portatori, ii) mappa di curve di disomogeneità nella distribuzione dei portatori su superfici di silicio. I nuovi dati ottenuti in entrambi i casi sono riportati e brevemente discussi.
    Abstract: Резюме В этой работе подтверждается важность электроотржениь при исследовании поверхностей полупроводников. Отмечаются два приложения: 1) определение глубин переходов и профилей носителей, 2) отображение кривых неоднородностей для распределения носитеяей на поверхностях кремния. В обонх случаях получается новая информацня, которая кратко обсуждается.
    Notes: Summary In this work the importance of electroreflectance is evidenced in two specific applications concerning studies of semiconductor surfaces: i) determination of junction depths and carrier profiles, ii) mapping of inhomogeneity curves of the carrier distribution on Si surfaces. New information in both cases is obtained and briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02460230
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  • 6
    Electronic Resource
    Electronic Resource
    Mean-field renormalization group with reaction field for diluted ising model (1987)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 9 (1987), S. 123-131 
    Details
    ISSN: 0392-6737
    Keywords: Phase equilibria, phase transitions, and critical points of specific substances
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Un metodo di rinormalizzazione basato sul campo medio con correzioni di campo di reazione è applicato a modelli di Ising diluiti. Sone trattati sia il caso di legami diluiti in due dimensioni, che quello di siti diluiti in due e tre dimensioni. Per diluizioni non troppo elevate il diagramma delle fasi è in buon accordo con altre predizioni. Ad alte diluizioni (vicino alla soglia di percolazione) possono verificarsi patologie dovute all’inadeguatezza del campo di reazione a basse temperature.
    Abstract: Резюме Группа перенормировки для среднего поля, включая поле взаимодействия, применяется к системам Изинга. Рассматриваются двумерное разбавление связи и двумерное и трехмерное разбавление узлов. Для слабого и среднего разбавления фазовые диаграммы хорошо согласуются с другими предсказаниями, однако для сильного раэбавления (вблизи порога перколяции) могут возникать патологии, связанные с выбором взаимодейстния при низкой температуре.
    Notes: Summary A mean-field renormalization group method including the reaction field is applied to diluted Ising systems. Two-dimensional bond dilution and both two- and three-dimensional site dilution are considered. For low and intermediate dilution, the phase diagrams agree well with other predictions, while for large dilution (near the percolation threshold) pathologies may show up related to the choice of the reaction field at low temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02451170
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of Ti1−x Hf x Se2 layered compounds from 1 to 9 eV (1984)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 4 (1984), S. 141-152 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties and materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono state studiate, mediante la tecnica della termoriflettanza, le principali strutture dello spettro interbanda dei cristalli Ti1−x Hf x Se2 (0≤x≤0.3 ex=1), fra 1 e 9 eV. Si sono così ottenute nuove indicazioni circa la corrispondenza fra gli spettri interbanda del TiSe2 e dell'HfSe2. Si riportano in dettaglio e discutono i dati di termoriflettanza a valori intermedi dix con evidenza di possibili effetti di «bowing». Non sono stati osservati apprezzabili effetti della transizione di fase a 200 K ad energie superiori a 2 eV.
    Abstract: Резюме Исследуются главные особенности междузонных спектров кристаллов Ti1−xHf x Se2 (0≤x≤0.3 иx=1) с помощью техники термоотражения в области от 1 до 9 эВ. Приводятся новые данные о соответствии между междузонными спектрами TiSe2 и HfSe2. Подробно обсуждаются данные при промежуточных значенияхx. Не наблюдаются заметные эффекты фазового перехода при 200 К в TiSe2 при энергиях выше 2 эВ.
    Notes: Summary The main structures of interband spectra of Ti1−x Hf x Se2 crystals (0≤x≤0.3 andx=1) have been investigated by means of thermoreflectance from 1 to 9 eV. New indications about the correspondence of the interband spectra of TiSe2 and HfSe2 are given. Detailed data at intermediate stoichiometries, which give also evidence of possible bowing effects, are reported and discussed. No relevant effect of the 200 K phase transition in TiSe2 is observable above 2 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02451574
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  • 8
    Electronic Resource
    Electronic Resource
    Electric-field effects on the infra-red absorption of H in a SiO2 film (1986)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 7 (1986), S. 87-97 
    Details
    ISSN: 0392-6737
    Keywords: Impurity and defect absorption in solids
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Per descrivere la dinamica di uno ione idrogeno impiantato in una matrice amorfa di SiO2, è stato sviluppato un semplice modello di oscillatore anarmonico localizzato. I dati sperimentali relativi allo spettro infrarosso elettromodulato (in configurazione di riflettanza interna multipla) sono stati riprodotti attraverso il calcolo del coefficiente di assorbimentoK in presenza di un forte campo elettrico statico.
    Abstract: Резюме Развивается простая модель локализированниго ангармонического осциллятора для моделирования динамики водорода в аморфном SiO2. Вычисляются козффициенты поглощения в присутствии сильного электрического поля с целью сравнения с экспериментальным инфракрасным спектром при многократном внутреннем отражении.
    Notes: Summary A simple model of a localized, anharmonic oscillator is developed to simulate the dynamics of hydrogen in amorphous SiO2. The absorption coefficient in the presence of a strong electric field is evaluated in order to make a comparison with experimental multiple internal reflectance infra-red spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02452398
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  • 9
    Electronic Resource
    Electronic Resource
    Infrared angular spectroscopy characterization of epitaxial layers ofn-type silicon grown on N+ or P+ substrates (1989)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 1773-1784 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties and materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro è illustrata una applicazione della tecnica della spettroscopia angolare nell'infrarosso per caratterizzare film epitassiali di silicio tipo-n cresciuti su substrati N+ o P+. Sono riportati e discussi alcuni risultati concernenti film con concentrazione di portatori liberi nell'intervallo fra 1014 cm−3 e 1017 cm−3 e spessori dell'ordine di 10 μm. Viene effettuato un confronto con risultati ottenuti con altre tecniche (tecnica delle quattro punte, spreading resistance, curveC−V, etc.) e vengono riportate alcune semplici e significative conclusioni.
    Abstract: Резюме В этой статье техника инфракрасной спектроскопии применяется для определения характеристик эпитаксиальных слоев кремнияn-типа, выращенных наN +-илиP +-подложках. Приводятся и сообщаются некоторые результаты, касающиеся пленок, имежщих концентрацию свободных носителей в области от 1014 см−3 до 1017 см−3 и толщину порядка 10 мкм. Проводится сравнение с результатами, полученными с помощью других методов.
    Notes: Summary In this paper the technique of infrared angular spectroscopy applied to the characterization of epitaxial layers ofn-type silicon grown on N+ or P+ substrates is illustrated. Some results are reported and discussed concerning films having a free-carrier concentration ranging from 1014 cm−3 to 1017 cm−3 and thickness of the order of 10 μm. A significant comparison with results obtained by other techniques (four-point probe, spreading resistance,C−V plots, etc.) is performed and a few simple conclusions are drawn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02459121
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  • 10
    Electronic Resource
    Electronic Resource
    Developments of solid-state spectroscopy in Pavia: from first steps to newest achievements (1993)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 15 (1993), S. 157-164 
    Details
    ISSN: 0392-6737
    Keywords: Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials ; Optical properties of thin films, surfaces, and thin layer structures (including superlattices, heterostructures and intercalation compounds)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary In this paper some significant aspects of the evolution of solid-state spectroscopy in Pavia are briefly reviewed in their basic lines starting from the '50s. As an example of historical trends and scientific developments, the authors describe and discuss two experiments on low-dimensional systems which, over a period of nearly three decades, represent a coherent approach to spectroscopic disciplines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02456900
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