ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4263-4268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this defect interacts with the two bands, i.e., is a recombination center trapping alternatively an electron, then a hole. An experiment based on minority carrier capture on a majority trap by the double carrier pulse DLTS technique further supports the evidence that H2 has a large minority carrier capture cross section and is an efficient nonradiative recombination center. Recombination-enhanced defect annealing rates obeys a simple Arrhenius law with an activation enthalpy of 0.51±0.09 eV, in contrast to athermal processes observed in GaP. Detailed analysis of results reveals that the mechanism involved in the minority carrier injection annealing of the H2 defect is energy release mechanism in which enhancement is induced by the energy which is released when a minority carrier is trapped on the defect site. Finally, analysis of the depth profiles data relates that H2 acts as a donor, which partially compensates the acceptors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353806
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1170-1178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present extensive systematic study of defect introduction rates as a function of boron, gallium, oxygen, and carbon concentrations by means of deep level transient spectroscopy has drawn a quite complete picture towards the identification of the dominant radiation-induced defects in Si. The radiation-induced defect EV+0.36 eV has been identified as Ci–Oi complexes. The absence of an EC−0.18 eV complex center in gallium-doped samples and the linear dependence of its introduction rates on both the boron and oxygen content fixed its identification as the Bi–Oi complex in boron-doped Si. One of the technologically important results of present study is that the gallium appears to strongly suppress the radiation induced defects, especially hole level EV+0.36 eV (Ci–Oi), which is thought to act as a recombination center as well as the dominant compensating center at EC−0.18 eV (Bi–Oi). As a result, the effects of lifetime degradation and carrier removal could be partially offset to higher radiation fluences by using Ga as a dopant instead of boron in Si space solar cells. The anneal out of the new hole level EV+0.18 eV in gallium-doped samples at around 350 °C, together with recovery of free carrier concentration, suggests that this level may act as a donor-like center which compensates free carrier concentration in gallium-doped Si. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384855
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained-layer superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2568-2570 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaAs films with dislocation densities of (1–2)×106 cm−2 on (100) Si substrates have been obtained for a combination of strained-layer superlattice (SLS) insertion such as InGaAs/GaAs, InGaAs/GaAsP, and AlGaAs/GaAs and thermal cycle annealing using the metalorganic chemical vapor deposition method. Remarkable reduction effects of dislocation density and dislocation generation in the GaAs layers due to SLS insertion on Si have been analyzed by a simple model, in which coalescence and generation of dislocations are assumed to be caused by dislocation motion under misfit stress of SLSs. Misfit stress dependence of dislocation density reduction in GaAs films on Si has been clarified using this model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101052
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    InGaP orange light-emitting diodes on Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1981-1983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaP light-emitting diodes (LEDs) that operate in the 600 nm region were fabricated on Si substrates using GaAsP/GaAs buffer layers. InGaP layers were grown by metalorganic-chloride vapor phase epitaxy, and GaAs and GaAsP buffer layers were grown by metalorganic vapor phase epitaxy at atmospheric pressure. An orange color emission was observed under room light at 20 mA dc injection. No degradation was observed in LED characteristics after 2000 h operation at an injection current of 500 A/cm2 despite the high dislocation density of 108 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102139
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Buffer layer effects on residual stress in InP on Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1754-1756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial growth of InP on Si(100) substrates using InP direct growth, and with a GaAs or GaP buffer layer has been grown by organometallic vapor phase epitaxy (OMVPE). The effects of buffer layers on residual stress in InP films are examined. For InP/(GaP buffer layer)/Si, stress (∼6×108 dyn/cm2) is almost independent on buffer layer thickness and somewhat higher than that (∼4×108dyn/cm2) in InP grown directly on Si. For InP/(GaAs buffer layer)/Si, stress is as low as 2×108 dyn/cm2 with buffer layer thicknesses (approximately-greater-than)1 μm. The GaAs buffer layer effect on reduction of stress in InP film is found to be attributed to compressive strains thermally induced by the InP/GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101281
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1928-1930 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crosshatch patterns were observed for the first time on the annealed GaAs film surfaces on Si substrates. The alignment of etch pits and the reduced electron beam induced current (EBIC) lines were also observed. They indicate that dislocations move and arrange themselves onto specified slip planes of {111} directions due to thermal strains in the annealing process. Flatter morphologies and more reduced EBIC intensity variations of the samples with crosshatch patterns indicate improved GaAs film quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98303
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6013-6018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage to diffused-junction n+-p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364449
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Radiation resistance of compound semiconductor solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1476-1480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1-MeV electron irradiation effects on molecular beam epitaxy-grown AlGaAs and InGaAs solar cells have been determined and compared with our previous results for radiation damage of InP and GaAs solar cells in order to clarify radiation resistance of compound semiconductor solar cells. Differences of radiation resistance of AlGaAs, GaAs, and InGaAs cells are found to be explained by band-gap energy effects on solar cell degradation. Moreover, 1-MeV electron irradiation results of several solar cells such as InP, InGaP, InGaAsP, GaAs, AlGaAs, InGaAs, Si, Ge, and CuInSe2 have also been analyzed by considering their damage constants, band-gap energies, and optical absorption coefficients. It is found that superior radiation-resistance of CuInSe2 and InP-based solar cells is explained by the higher optical absorption coefficient of CuInSe2 and lower defect introduction rates (damage constants) of InP-based materials compared to other compound semiconductor materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360236
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effects of irradiation temperature on radiation damage in InP solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3679-3683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1-MeV electron irradiation damage in n+-p junction InP solar cells has been studied as a function of irradiation temperature, in comparison with those in GaAs cells. Solar cell property degradation of InP solar cells due to electron irradiation has been found to strongly decrease with an increase in irradiation temperature while that in GaAs cells is independent of irradiation temperature up to 150 °C. These results are explained by thermal annealing phenomena of radiation-induced defects in InP solar cells. The irradiation temperature dependence of radiation damage in InP cells has been analyzed based on annealing characteristics of radiation-induced defects, determined by deep-level transient spectroscopy measurement, in InP. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358606
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 915-919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes some recent developments in GaAs thin-film solar cells fabricated on Si substrates by metalorganic chemical vapor deposition and numerically analyzes them.GaAs solar cells with efficiency of more than 18% are successfully fabricated on Si substrates by reducing the dislocation density. Photovoltaic properties of GaAs/Si cells are analyzed by considering the effect of nonuniform dislocation distribution on recombination properties of GaAs thin films on Si substrates. Numerical analysis shows that the effect of majority-carrier trapping must be considered. High efficiency GaAs solar cells with total-area efficiency of over 20% on Si substrates can be realized if dislocation density can be reduced to less than 5×105 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343520
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...