ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
Thin films of single c-domain/single crystal (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), x≅0.33near a morphotropic boundary (MPB) composition, were heteroepitaxially grown on(110)SRO/(001)Pt/(001)MgO substrates by magnetron sputtering. The heteroepitaxial growth wasachieved by rf-magneron sputtering at the substrate temperature of 600oC. After sputteringdeposition, the sputtered films were quenched from 600oC to room temperature in atmospheric air.The quenching enhanced the heteroepitaxial growth of the stress reduced single c-domain/singlecrystal PMN-PT thin films. Their electromechanical coupling factor kt measured by a resonancespectrum method was 45% at resonant frequency of 1.3GHz with phase velocity of 5500 to 6000m/sfor the film thickness of 2.3μm. The d33 and d31 were 194pC/N and –104pC/N, respectively. Theobserved kt , d33 ,and d31were almost the same to the bulk single crystal values
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.45.1212.pdf
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