ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Observation of quantum confined Stark effect in InxGa1−xAs/GaAs single-quantum well by photoreflectance spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2117-2119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance spectroscopy of the InxGa1−xAs/GaAs single-quantum well system has been measured at several reverse dc bias voltages. The spectrum can be divided into two parts by the photon energy; one belongs to the GaAs bulk transition and the other belongs to the InxGa1−xAs/GaAs quantum well transition. The GaAs transition has shown the Franz–Keldysh oscillations which can be used to deduce the strength of the electric field in the bulk GaAs. On the other hand, the InxGa1−xAs/GaAs quantum well transition has exhibited the quantum confined Stark effect; that is, the transition energy in the quantum well will be redshifted in the presence of an electric field. The field in the quantum well can be estimated from the amount of redshifting and it was found that the built-in field in the quantum well needs to be close to that of GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360191
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Window layer for current spreading in AlGaInP light-emitting diode (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2603-2611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current spreading effect and other characteristics of an AlGaInP double-heterojunction (DH) light-emitting diode (LED) were investigated via numerical calculation and experimental results. The finite difference method was employed to numerically solve the two-dimensional steady-state equations of a semiconductor device. Poisson's equation and two continuity equations were approximated by a set of equations under the assumption that the hole and electron current components along the mesh lines are constant between two neighboring mesh points. Additionally, the DH structure was modified to a simple p-n junction model, in light of the fact that the former does not contribute significantly to the current spreading effect. Furthermore, a comparison of the measured light intensities from LEDs with the calculated current densities revealed a sufficient correlation. Experimental results indicated that a 10-μm-thick window layer with a carrier concentration at 2×1018 cm−3 would be adequate for an optimum device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357556
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Origins of 1/f noise in indium antimonide photodiodes (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 739-743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1/f noise in indium antimonide (InSb) photodiodes has been measured as function of temperature, gate bias, diode voltage, junction area, and photon flux in order to identify the dominant noise mechanisms. Since these parameters varied the relative contributions of the various current mechanisms, the diode current mechanism responsible for 1/f noise was isolated. It was found that 1/f noise is independent of photocurrent and diffusion current but is linearly related to surface generation current. It is proposed that 1/f noise in reverse-biased InSb photodiodes is a result of modulation of the surface generation current by fluctuations in the surface potential. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364215
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4719-4723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide (SiO2) insulator layers on indium antimonide (InSb) have been prepared by direct photochemical-vapor deposition at low temperature below 200 °C using 2537 A(ring) UV light. Ellipsometric studies prove that the refractive index and deposition rate of the photo-oxide films depend on the substrate temperature and gas ratio. The films evaluated by Auger electron spectroscopy (AES) depth profile showed that composition atoms were distributed uniformly throughout the oxide film. The AES analysis found the dominant components of the oxide film are silicon and oxygen. Fourier transform infrared spectroscopy absorption shows that the grown film has strong Si—O bonds with few Si—H bonds. The chemical x-ray photoelectron spectroscopy depth profile shows that the constituents of the semiconductors' outdiffusion into the oxide are few. Metal-oxide-semiconductor (MOS) capacitors were constructed on InSb substrates. Capacitance voltage (C-V) characteristics of the MOS capacitors were measured at 77 K. The interface-state density is of the order of 1011 cm−2 eV−1, and distributed in a very good U shape within the midgap. C-V curves showed almost no hysteresis and smaller flatband voltage. The current-voltage curve shows the leakage current is about 1 nA at 0.8 V, and the breakdown voltage is about 0.8 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357265
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Optical and structural characterization of InAs/GaSb superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7529-7532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/GaSb superlattices sandwiched between conventional InAs layers were grown by low pressure metal organic chemical vapor deposition. Period and roughness of the superlattices were examined by field emission transmission electron microscopy. Room temperature infrared absorption spectra for InAs/GaSb superlattices were obtained by Fourier-transform infrared spectroscopy. The effects of varying the doping levels and thicknesses of the InAs sandwiching layers on the absorption spectra of InAs/GaSb superlattices were studied. It was found that by choice of suitable doping levels and cap/buffer thicknesses, the resulting fermi level equalization (as in normal homo or heterojunctions) thereby allowed the setting or "pinning" of the superlattice Fermi level to any desired value within the range made available by the original bulk material characteristics in conjunction with the doping conditions. When the thicknesses of the InAs sandwiching layers became less than 1 μm, the sandwiching effect and the intersubband transition decreased dramatically. The structure of the interfaces inside the superlattice was also studied. Energy dispersive spectroscopy was used to estimate interdiffusion conditions within the superlattice. The effects of different periods and purge gases on the absorption spectra were also studied. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365295
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Study on symmetry forbidden transitions in an InxGa1−xAs/GaAs single quantum well by temperature dependence (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6500-6503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoreflectance (PR) spectroscopy of the single quantum well InxGa1−xAs/GaAs system has been measured at various temperatures. The selection rules for the interband transitions are Δn=0, where n is the quantum number of the nth subband in the quantum well. The symmetry forbidden transitions (Δn≠0), such as 12H (where mnH denotes transition between the mth conduction to nth valence subband of heavy hole), were often observed in the experiments and it was attributed to the existence of the built-in electric field in the quantum well. In this work, we change the strength of the built-in electric field by varying the temperatures of the samples. By varying the temperatures of the samples, the strength of the field can be changed by the effect of photo-induced voltages. The measured ratios of the intensities of 12H to 11H transitions decrease as the temperatures are lowered. Therefore, the existence of the built-in electric field may account for the observations of the symmetry forbidden transition 12H in the experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359058
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    The doping concentration dependence of zinc and tin in InGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2211-2213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.53Ga0.47As epitaxial layers doped with Zn and Sn were grown on InP (100) substrates by liquid-phase epitaxy with a 5 °C supersaturation temperature. The physical properties of the doped layers have been investigated. The peak energy of (D0,A0) pair band emission in Zn-doped InGaAs layers decreases with a linear slope of 0.7×10−8 eV cm as the cube root of net hole concentration is increased. In Sn-doped layers, the photoluminescent peak wavelength decreases with increasing electron concentration due to the Burstein–Moss shift and band-tailing effects. The relative peak intensity deteriorates in highly doped layers due to the formation of complex precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342499
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    The doping concentration dependence of the zinc acceptor ionization energy in In0.49Ga0.51P (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3907-3908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping concentration dependence of the zinc acceptor energy level in In0.49Ga0.51P has been studied and can be expressed as EA=45.75−8.20×10−6 P1/3 meV, where P is the zinc acceptor concentration in cm−3. The zinc-doped In0.49Ga0.51P epitaxial layers were grown on 〈100〉 oriented semi-insulating GaAs substrates which are in very good crystallinity with a lattice mismatch of only 0.26%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335610
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum light-emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8175-8178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature- and field-dependent electroluminescence and quantum efficiency have been investigated in tris-(8-hydroxy) quinoline aluminum (Alq3) light-emitting diodes over the temperature range from 10 to 300 K. At lower applied voltage, two peaks have been observed in the quantum efficiency with temperature. The two peaks are attributed to the deep trap levels (high-temperature regime) and shallow trap levels (low-temperature regime) in Alq3. With increasing voltage, the high-temperature peak shifts toward lower temperature but no significant shift of the low-temperature peak is observed. At voltage around 10 V, superposition of two peaks causes the apparent saturation in the low-temperature regime of the quantum efficiency. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364651
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    The fabrication of single heterojunction AlGaAs/InGaP electroluminescent diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2541-2544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaAs/AlxGa1−xAs/In0.5Ga0.5P single heterostructure electroluminescent devices have been fabricated by liquid-phase epitaxy. Three different compositions (x=0.45, 0.58, and 0.85) of AlxGa1−xAs layers were made to compare their properties. Diodes fabricated from these heterostructures have been characterized by electron beam induced current, electroluminescence, quantum efficiency, output power, and current-voltage measurements. Emission peak wavelengths and full width at half maximum values of the light emitting diodes are, respectively, 652.5, 654.4, and 652.8 nm, and 67, 67, and 75 meV. The peak wavelengths of the light emitting diode shift 6 meV towards the lower-energy side compared to the photoluminescent peak wavelength of the same electron concentration in the Te-doped In0.5Ga0.5P layer. For most light emitting diodes, output powers and efficiency are in the range of 50–100 μW and 0.062%–0.1%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339467
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...