Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 188-190
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Quantum wires ≈300–400 A(ring) wide were fabricated by holographic photolithography from a wafer having a single 100 A(ring) InGaAs quantum well. The wires were then recoated with InP using atmospheric pressure organometallic vapor phase epitaxy, which resulted in a planar surface. A high-resolution scanning electron microscope showed little deterioration of the wires due to recoating. At moderate intensities ≈10 W/cm2, photoluminescence (PL) studies showed a small shift in energy (≈6 meV) and a slight line narrowing consistent with a one-dimensional structure. The quantum efficiency of the wires was comparable to the control wafer—above that expected from the fill factor of 17%. Some evidence of states below the energy gap is seen at low PL excitation, but these appear to saturate at higher excitations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101222
Permalink
|
Location |
Call Number |
Expected |
Availability |