Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2007-2009
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new dry etching technique is described which allows for decoupling of the chemical etch component from the ionic (physical) component which cannot be achieved in other conventional plasma processing methods. A magnetically confined rf plasma of SF6 was used to contribute a reactive chemical flux with ion bombardment energies of less than 50 eV. In conjunction with this reactive plasma, a broad beam ion source was used to independently deliver an Ar+ ionic flux to the substrate. It was observed that the ion enhanced etch rates of silicon were greater than the individual magnetron reactive ion etch and the argon ion milling rates combined. However, the structure profiles were observed to be directly related to the separately controllable etch components.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98275
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