Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 859-862
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The galvanomagnetic transport in (111)B HgCdTe p-type layers, grown by molecular beam epitaxy, was studied as a function of temperature and magnetic field strength. Experimental data on the Hall coefficient and conductivity tensor versus magnetic field have been analyzed with the assumption of three charge carriers involved in the conduction mechanism: one carrier coming from the conduction band and the other two from the complex nature of the valence band. Indeed, two kinds of positive charge carriers with completely different mobilities in the extrinsic region are seen. The extracted parameters are in very good agreement with the intrinsic concentration over a wide temperature range.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345743
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