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  • 1
    Electronic Resource
    Electronic Resource
    Evolution of Monoclinic SiAs Precipitates in Heavily As〈sup〉+〈/sup〉 Implanted and Isothermally Annealed Silicon (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 19-20 (Jan. 1991), p. 393-398 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/25/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.19-20.393.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Clustering equilibrium and deactivation kinetics in arsenic doped silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 101-107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The equilibrium between clusters and dopant in solution was studied on silicon on insulator specimens uniformly doped with As at concentrations CAs from 1 to 7.6×1020 cm−3. The values of the carrier density n* after equilibration at 700, 800, and 900 °C are reported. With increasing dopant concentration n* rapidly saturates to the limiting value of the carrier density ne, thus simulating a precipitation process. It is shown that the values of n* at different temperatures and dopant concentrations can be calculated by an equation derived in the Appendix by using a simple cluster model. The deactivation was analyzed by isothermal annealing of the specimens at temperatures in the range 550–800 °C. At high temperature the kinetics accurately complies with the rate equation −dn/dt=A{exp[−(E−αn)/kT]−(n0−n)/(n0−n*)exp[−(E−αn*)/kT]} which is the one reported in [D. Nobili, S. Solmi, M. Merli, and J. Shao, J. Electrochem. Soc. 146, 4246 (1999)] complemented by the second term on the right to account for the declustering process. Deviations leading to rates lower than predicted by the above equation are presented by the most heavily doped compositions after partial deactivation at temperatures ≤ 700 °C. The analysis of this phenomenon puts into evidence that clustering presents a limiting rate which only depends on temperature and carrier density, and is insensitive to As concentration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377607
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  • 3
    Electronic Resource
    Electronic Resource
    Reverse annealing, clustering, and electron mobility in arsenic doped silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 658-662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse annealing phenomena and the nature of the As clusters were studied on silicon on insulator samples uniformly doped with As at concentrations up to 7.6×1020 cm−3. Carrier concentration and electron mobility were determined by Hall and resistivity measurements after annealing at temperatures in the range 550–800 °C. The amplitude of transient reactivation, which can involve up to 20% of the clustered As, depends on dopant concentration and on the annealing temperatures and times. The results of a detailed study of the influence of these parameters are reported. The occurrence of reverse annealing confirms the existence of different types of As clusters, whose distribution and features depend on the experimental conditions. The effect of clustered As on the electron mobility was measured and a quantitative relationship for this phenomenon is reported. The amplitude of this effect is in agreement with the view that at room temperature As clusters are electrically neutral. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371922
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  • 4
    Electronic Resource
    Electronic Resource
    High-temperature thermal evolution of SiAs precipitates in silicon (1992)
    Springer
    Applied physics 54 (1992), S. 221-224 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 64 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×1017 As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×1021 cm−3 at 1050° C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323840
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  • 5
    Electronic Resource
    Electronic Resource
    Study of the kinetics of recrystallisation of dispersion-strengthened (Al/Al2O3) alloys (1968)
    Springer
    Journal of materials science 3 (1968), S. 282-287 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The kinetics of recrystallisation of an SAP alloy containing 5.25 wt % oxide has been studied, mainly by metallographic observations and transmission electron microscopy. At the beginning of the process the isothermal reaction follows the Avrami lawx=1− exp (−Bt k) withk − 1.7. A deviation from the above kinetics takes place with increasing time; it is shown by metallographic observations and from the effect of preliminary recovery that this behaviour results from competition between recovery and recrystallisation. The competing process has an activation energy close to the value of 1.57 eV, previously determined for the stage of dislocation recovery preceding recrystallisation. Results reported by other authors have been analysed, and it is noticed that competition is a general feature of recrystallisation in these alloys; this effect becomes more pronounced with increasing oxide concentration, and can ultimately stop recrystallisation. The analysis of the kinetics of recrystallisation indicates that the dispersed phase not only reduces the driving force for grain boundary migration, but also affects mobility by raising the activation energy of the process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00741962
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  • 6
    Electronic Resource
    Electronic Resource
    Study of the recrystallisation of aluminium/alumina (SAP) alloys (1968)
    Springer
    Journal of materials science 3 (1968), S. 1-8 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The influence of the introduction of aluminium nuclei on the recrystallisation behaviour of SAP (sintered aluminium powder) was studied by metallographic observations using a new etching reagent, and by transmission electron microscopy. It was observed that the artificial nuclei can grow in the SAP matrix only in the temperature range in which the alloy recrystallises spontaneously. It is concluded that the physical process inhibited by the dispersed particles is grain-boundary migration. These results and those previously reported confirm Cahn's theory (which regards the formation of new grains as due to recovery phenomena localised in the regions of highest lattice distortion) supplemented by the coalescence mechanism proposed by Hu and Li, Moreover, the basic concepts of “nucleation” and “growth” currently employed to describe recrystallisation phenomena are critically discussed: it is concluded that a reformulation of these concepts is necessary on the basis of the information obtained by means of the more recent experimental techniques, such as electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00550882
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of the slip bands and glide planes in aluminium/alumina alloys (SAP) (1969)
    Springer
    Journal of materials science 4 (1969), S. 61-64 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract SAP specimens, strained between room temperature and 440° C, show wavy slip bands having complex indices. These features probably result from double slip occurring on {111} and {211} planes, with a common 〈01¯1〉 direction. At room temperature slip is very fine. It is noticed that, at constant temperature, increasing the strain-rate results in finer bands more closely spaced, while at constant strain rate, spacing between bands increases markedly with temperature. This behaviour is more pronounced in SAP than in aluminium. Experiments suggest that dislocation recovery should be important in determining the density of bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00555049
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  • 8
    Electronic Resource
    Electronic Resource
    Lattice parameter study of silicon uniformly doped with boron and phosphorus (1974)
    Springer
    Journal of materials science 9 (1974), S. 821-828 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Powder and single-crystal X-ray techniques have been employed to obtain precise lattice parameters of silicon uniformly doped with boron or phosphorus. Good agreement is found between the two methods. Previous accurate determination of the CuKα1, effective wavelength has yielded λ=1.540621±0.000006 Å. Particular care has been devoted to the chemical and electrical characterization of the alloys, whose maximum dopant concentrations were 8×1019 atoms cm−3 for P and 4.4×1020 atoms cm−3 for B. A linear dependence of lattice parameter on concentration has been found for P in the whole examined range, while for B a deviation from the linear trend starts at about 2.25×1020 atoms cm−3. Tetrahedral radii are found to be 1.176 Å for pure Si, 1.07 Å and 0.91 Å respectively for dissolved substitutional P and B. Values of the linear lattice contraction coefficient, volume size factor, Vegard's law factor and elastic strain energy in both alloys are reported and discussed. The deviation from linear trend in borondoped alloys is analysed and it is shown that the phenomenon is insensitive to heattreatments and does not depend on the degree of ionization of boron atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00761802
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  • 9
    facet.materialart.
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    Reverse annealing, clustering, and electron mobility in arsenic doped silicon (2000)
    American Institute of Physics
    Details
    Publication Date: 2000-01-15
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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  • 10
    facet.materialart.
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    Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation (2006)
    American Institute of Physics
    Details
    Publication Date: 2006-08-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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