ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    VAM association in the shrub Myrica cerifera on a Virginia, USA barrier island (1995)
    Springer
    Mycorrhiza 5 (1995), S. 423-429 
    Details
    ISSN: 1432-1890
    Keywords: Barrier island ; Actinorhizal ; Vesicular-arbuscular mycorrhizae (VAM) ; Myrica cerifera ; Shrub thicket
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract A combined laboratory and field study examined the potential for a symbiotic association between the actinorhizal shrub Myrica cerifera and vesicular arbuscular mycorrhizal (VAM) fungi on a Virginia barrier island. M. cerifera seedlings and two test species, Zea mays and Strophostyles umbellata, were grown in an environmental chamber on soils collected from four sites differing in soil age (〈 5 to over 130 years), salinity (1–35 μg/g total soil chloride), and edaphic characteristics. Seedling root infection was significantly lower for all three species in the youngest soils from the beach where salinity was highest. Stained M. cerifera roots revealed all the components for a functional VAM association; however, there were significantly fewer arbuscules and vesicles relative to the test species. Among field-collected M. cerifera, infection was not detected in mature shrubs from the bay side of the island, where M. cerifera thickets were in a state of degeneration. Infection was highest in soils from the young, developing thickets, and in the most stable thickets of the island interior. Despite the dynamic nature of the barrier island environment, VAM associations with M. cerifera appear to be present, especially in seedlings and developing shrub thickets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00213443
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Improvement of the SiO2/Si interface of metal-oxide-semiconductor devices using gate dielectrics formed by NF3-aided oxidation and N2O post-annealing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2564-2571 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With the increasing requirement for ultrathin gate dielectrics in advanced metal-oxide-semiconductor structures, a low thermal budget process to grow thin dielectric film is vital, while at the same time maintaining the good interface quality and thin film reliability. In this article, thermal nitridation of fluorinated oxide in N2O ambient was investigated. While fluorinated oxides provide a lower thin film stress and better interface than conventional oxides, an excess amount of fluorine in the starting oxide has an adverse effect on the high field stability. For N2O-nitrided oxide, high temperature and prolonged nitridation time reduce the interface state generation ΔDit resulting from avalanche electron injection at the expense of increasing the flatband voltage shift ΔVfb. The electrical properties are strongly process dependent. The best operating window of N2O nitridation of fluorinated oxide (F-ox), grown at 900 °C with a 100 ppm NF3 additive, lies between 30 and 120 min at 950 °C. With careful control of fluorinated oxide growth parameters and N2O annealing, we have demonstrated an excellent way to fabricate dielectric thin films for future applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356230
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    New methods for using the Q-V technique to evaluate Si-SiO2 interface states (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3889-3893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Q-V technique applied to metaloxide silicon capacitors makes it possible to measure the silicon-oxide interface potential directly with only a few simple assumptions. From these data of interface potential versus gate voltage it is possible to calculate the interface state distribution. The Q-V technique can be used over the entire band gap range and separate n- and p-type samples are not required. New simplified techniques for doing this are presented. The measurements can also be used to determine the band gap of the semiconductor which should have application for the study of silicon-germanium alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350855
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electron injection studies on fluorine-implanted oxides (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2755-2759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of fluorine on electron trapping in SiO2 films has been studied by avalanche electron injection. Samples are prepared by 25-keV fluorine implantation into dry oxides followed by a 1000 °C N2 ambient anneal. Bulk electron traps with capture cross sections on the order of 10−17–10−19 cm2, which are not due to implantation damage, are filled by avalanche electron injection. An optimum dosage of fluorine implantation to suppress the so-called turnaround effect during avalanche injection exists. This suggests that fluorine might passivate slow interface donor states or reduce bulk hydrogen diffusion. The observation that high-temperature (120 °C) injection can eliminate most fast and slow interface states for conventional oxides is also true for fluorinated oxides. Our results indicate an enhanced generation of fast donor states for oxides containing fluorine. These states contribute a positive charge when the Fermi level is in the lower portion of the band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349360
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Effect of germanium implantation on metal-oxide-semiconductor avalanche injection (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3499-3500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of germanium on the hot electron current of a metal-oxide-semiconductor device has been studied by avalanche electron injection from the silicon to the silicon dioxide. Different doses of germanium ranging from 1012 to 1015 atoms/cm2 are implanted into the Si-SiO2 interface. The "lucky'' hot electron population is suppressed by the germanium implantation. We have used the charge-voltage technique to measure the interface state density. The interface state density increase caused by the Ge implantation is negligible if the dose is lower than 1014 Ge/cm2. Our results show that the Ge implantation is a promising method to solve the hot carrier problem that has become important in submicrometer devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109007
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Effects of applied NaCl on Opuntia humifusa (1988)
    Oxford, UK : Blackwell Publishing Ltd
    Physiologia plantarum 72 (1988), S. 0 
    Details
    ISSN: 1399-3054
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Plant morphology in the field in Virginia, USA, and growth responses to applied NaCl in a glasshouse were determined for two populations of Opuntia humifusa (Rafinesque) Rafinesque, one from an inland site and the other from the marine strand, which differed in potential exposure to salinity. Cladode dimensions, plant height and rooting depth varied significantly between the populations. Application of NaCl in 50 mM increments up to 400 mM every 3 days for 6 weeks caused the cladodes to decrease up to 30% in thickness, the decrease being about 20% more at 50 to 150 mM NaCl for plants from the inland site than from the marine strand. Inhibition by 150 mM NaCl of the maximum rate of net CO2 uptake and of the total CO2 uptake over a 24-h period was greater for the inland population. Growth, especially of roots, was inhibited by applied NaCl, with a decrease in biomass above 200 mM NaCl for plants from the inland site and not until 400 mM for those from the marine strand. Although the root Na+ level was the same for plants from the two populations, reaching a maximum of about 8 mg (g dry weight)−1 at 200 mM NaCl, the cladode Na+ level was two-fold higher for plants from the marine strand than from the inland site. Thus, exclusion of Na+ from the cladodes is not the reason for the greater NaCl tolerance of O. humifusa from the marine strand, which is a habitat that can experience periodic episodes of high salinity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1399-3054.1988.tb05843.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    facet.materialart.
    Unknown
    Freshwater and saltwater flooding response for woody species common to barrier island swales (1997)
    Springer
    Details
    Publication Date: 1997-03-01
    Print ISSN: 0277-5212
    Electronic ISSN: 1943-6246
    Topics: Biology
    Published by Springer
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 8
    facet.materialart.
    Unknown
    Effect of germanium implantation on metal‐oxide‐semiconductor avalanche injection (1993)
    American Institute of Physics
    Details
    Publication Date: 1993-06-28
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 9
    facet.materialart.
    Unknown
    Assessment of single-instrument techniques for removing wave bias from Reynolds stress estimates (2017)
    Wiley
    Details
    Publication Date: 2017-12-09
    Description: A new single-instrument method for removing wave bias from Reynolds stress estimates is proposed. Assuming that the wave motions and the pressure signal are spatially coherent, the method uses a linear filtration scheme to estimate the wave velocity at the instrument based on the pressure signal, and then the estimated velocity is subtracted from the measured velocity to arrive at a wave-free estimate of the Reynolds stress. The advantage of the proposed single-instrument technique is that it limits the financial and logistical issues associated with deploying a second instrument. The proposed method is compared to two frequency-domain-based single-instrument techniques and to a two-instrument method that uses the velocity signal at an adjacent instrument in a linear filtration scheme to estimate and remove the wave velocity. The methods are tested and compared using synthetic time series and field data collected in tidally driven shallow water flow in Wassaw Sound, Georgia and in deeper water currents in Monterey Bay, California. The method proposed in this study offers superior performance over the other single-instrument techniques in shallow water, comparing favorably with the two-instrument method. In deeper water, no single-instrument technique offers clearly superior performance.
    Electronic ISSN: 1541-5856
    Topics: Biology , Geosciences
    Published by Wiley on behalf of The Association for the Sciences of Limnology and Oceanography (ASLO).
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 10
    facet.materialart.
    Unknown
    Differential effects of two explosive compounds on seed germination and seedling morphology of a woody shrub, Morella cerifera (2014)
    Springer
    Details
    Publication Date: 2014-10-22
    Print ISSN: 0963-9292
    Electronic ISSN: 1573-3017
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Published by Springer
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...