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  • 1
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    Theory of dislocation pile-ups (1969)
    The American Society of Mechanical Engineers
    In:  Professional Paper, Mathematical Theory of Dislocations, New York, The American Society of Mechanical Engineers, vol. 20, no. 16, pp. 116-177, (ISBN 1-86239-165-3, vi + 330 pp.)
    Details
    Publication Date: 1969
    Keywords: Dislocation ; Elasticity theory of dislocations
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    BIBLIOGRAPHY SEISMOLOGY
  • 2
    Electronic Resource
    Electronic Resource
    Vapor Pressures and Boiling Points of the l-Fluoroalkanes, l-Chloroalkanes, l-Bromoalkanes, and l-Iodoalkanes, C1to C20. (1961)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 6 (1961), S. 268-270 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je60010a025
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  • 3
    Electronic Resource
    Electronic Resource
    Interaction of an edge dislocation with an interfacial crack (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2215-2226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress and displacement fields of an edge dislocation near a semi-infinite or a finite interfacial crack are formulated by using the complex potential theory of Muskhelishvili's elasticity treatment of plane strain problems. The image forces exerted on the dislocation have an oscillatory character (with respect to the dislocation position) if the dislocation is originated elsewhere and moves to the vicinity of a finite interfacial crack. There is no such oscillation of image forces if the edge dislocation is emitted from the finite interfacial crack or if the crack is semi-infinite. The stress intensity factors produced by the edge dislocation also have an oscillatory character for both semi-infinite and finite interfacial cracks. They also depend on whether the dislocation is emitted from the crack or comes from elsewhere.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351614
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  • 4
    Electronic Resource
    Electronic Resource
    Impression creep of a thin film by vacancy diffusion. I. Straight punch (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4382-4389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A closed-form solution for diffusion in two dimensions is obtained for impression creep of a thin film by a straight punch. The results show that for a rigid impermeable substrate the penetration rate is proportional directly to the thickness of the film and inversely to the square of the punch width. Without the substrate the penetration rate is inversely proportional to the thickness of the film and independent of the punch width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354406
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  • 5
    Electronic Resource
    Electronic Resource
    Impression and diffusional creep of anisotropic media (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 110-117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some diffusion problems in the impression and diffusional creep of anisotropic materials are analyzed. It is found that at the limit of low stress, both the diffusional creep rate and impression velocity are proportional to the applied stress. For a parallelepiped crystal under simple tension or compression in the Z direction, the diffusional creep rate depends on all three principal diffusivities, DX, DY, and DZ. Two limiting cases depend on the quantity (square root of)DXDY/DZ. When this quantity is large the creep rate is proportional to (square root of)DZ but when it is small the creep rate is independent of DZ. For a cylindrical crystal under tension or compression in the axial Z direction, the creep rate depends on Dr/DZ. When the ratio is large, the creep rate is the same as the isotropic case except that the effective diffusivity is (square root of)DrDZ. When the ratio is small, the creep rate is proportional to Dr and independent of DZ. For the impression creep of a half-space the punch velocity is proportional to the geometric mean of the principal diffusivities parallel and perpendicular to the loading direction, and inversely proportional to the punch dimension. For impression creep of a thin film deposited on an impermeable substrate under the same punching stress, the impression velocity is dependent only on the diffusivity parallel to the thin film, and inversely proportional to the square of the punch dimension. Without the substrate, the impression velocity is dependent only on the diffusivity perpendicular to the thin film, inversely proportional to the thickness of the film, and independent of the punch dimension. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359524
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  • 6
    Electronic Resource
    Electronic Resource
    Impression creep of a thin film by vacancy diffusion. II. Cylindrical punch (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4390-4397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion problem in the impression creep of a thin film by a cylindrical punch is analyzed. It is found that at low stresses the impression velocity is proportional to the punching stress. For the same punching stress and the same punch radius the impression velocity decreases for a rigid substrate, and increases without the substrate as the thickness of film decreases. Two limiting cases for the rigid substrate agree with the previous work, namely, the impression velocity is inversely proportional to the punch radius for impression creep of a half-space, and inversely proportional to the square of the punch radius for impression creep of a thin film. Without the substrate the impression velocity for impression creep of a thin film is inversely proportional to the thickness of the film and independent of the punch radius.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354407
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  • 7
    Electronic Resource
    Electronic Resource
    Interaction of a screw dislocation with an interface crack (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 744-751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction between a screw dislocation and an interface cylindrical hole is found to depend on the source and location of the screw dislocation. When a screw dislocation is inside one of the media it has one image in the other medium. If the real dislocation is emitted from the hole which is originally stress free, it has only two images inside the hole. However, if the real dislocation is emitted from elsewhere and moves to the vicinity of the hole, there is a third image at the center of the hole to keep the total Burgers vector of the images in the hole zero. These considerations were used to study the interaction of a screw dislocation with an interface crack (or elliptical hole) by means of conformal mapping. The effect of the screw dislocation on the stress intensity factor at the crack tip is continuous when the screw dislocation moves from one medium across the interface to the other medium. The image force can be divided into two parts. One part is due to the interface and the other is due to the interface crack. The composite solid behaves like a homogeneous solid with an effective shear modulus when the dislocation is in the interface. The interaction between two or more screw dislocations in the presence of an interface crack is studied also. The latter result can be used to study the emission of an array of screw dislocations from an interface crack.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349630
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  • 8
    Electronic Resource
    Electronic Resource
    Annealing of deformed polymers under dimensional constraint (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2659-2664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two-stage process discovered in the recovery of deformed amorphous polymers (PS, PMMA, and PC) is verified in this study. The first stage which takes place below Tg releases part of the stored energy (part 1) and recovers the volume. The second stage which takes place above Tg releases the rest of the stored energy (part 2) and recovers the dimension. The relation between the part 2 stored energy and dimensional changes during deformation is the same as that during recovery. In this study, the dimension is constrained not to change during recovery. As expected, the part 2 stored energy is not released but the part 1 stored energy is released as usual. Furthermore, if in a second scan the constraint is removed and the dimension is allowed to recover, the part 2 stored energy is then released. These results confirm the unique relationship between dimension and the part 2 stored energy and the separability of the two-stage recovery process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337092
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  • 9
    Electronic Resource
    Electronic Resource
    Unloading behavior of dislocations emitted from a crack (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4117-4124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Upon unloading, dislocations emitted from a crack can be retracted partially (stationary crack with lattice friction for dislocation motion) or completely (moving crack or zero friction for dislocation motion). The behavior of the plastic zone, the dislocation distribution, and the dislocation-free zone during the retraction process are studied by computer simulation. A propagating crack always moves forward upon unloading until all the dislocations are retracted. Its speed could be much faster during retraction than during the emission of dislocations. The rate of dislocation retraction or crack motion is slow in the beginning but then suddenly the crack jumps forward to retract all the rest of dislocations. This incubation period before the sudden crack surge seems to depend on the size of the dislocation-free zone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335541
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  • 10
    Electronic Resource
    Electronic Resource
    Dislocation model of a subsurface crack (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4816-4822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dislocation model of a subsurface crack parallel to the surface is presented. For tensile loading, the results agree with those of previous workers except that we studied the crack very close to the surface and found that KII (mode II stress intensity factor) approaches KI (mode I stress intensity factor) to within about 22% (KII=0.78KI). (Note that KII is zero when the crack is far away from the surface). Using bending theory for such situations, it is found that both stress intensity factors are inversely proportional to the 3/2 power of the distance between the subsurface crack and the free surface. For shear loading, the crack faces overlap each other for the free traction condition. This indicates the failure of the model. However, there was no overlap for tensile loading even though the stresses in front of the crack oscillate somewhat when the crack is very close to the surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366341
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