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  • 1
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    Flexible parylene-film optical waveguide arrays (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-26
    Description: Modulation of neuronal activities by light [e.g., laser or light-emitting diode] using optogenetics is a powerful tool for studies on neuronal functions in a brain. Herein, flexible thin-film optical waveguide arrays based on a highly biocompatible material of parylene are reported. Parylene-C and -N thin layers with the different refractive indices form the clad and the core of the waveguide, respectively, and neural recording microelectrodes are integrated to record optical stimuli and electrical recordings simultaneously using the same alignment. Both theoretical and experimental investigations confirm that light intensities of more than 90% can propagate in a bent waveguide with a curvature radius of 〉5 mm. The proposed flexible thin-film waveguide arrays with microelectrodes can be used for numerous spherical bio-tissues, including brain and spinal cord samples.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Enhancement of spin-Seebeck effect by inserting ultra-thin Fe70Cu30 interlayer (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-02-24
    Description: We report the longitudinal spin-Seebeck effects (LSSEs) for Pt/Fe 70 Cu 30 /BiY 2 Fe 5 O 12 (BiYIG) and Pt/BiYIG devices. The LSSE voltage was found to be enhanced by inserting an ultra-thin Fe 70 Cu 30 interlayer. This enhancement decays sharply with increasing the Fe 70 Cu 30 thickness, suggesting that it is not due to bulk phenomena, such as a superposition of conventional thermoelectric effects, but due to interface effects related to the Fe 70 Cu 30 interlayer. Combined with control experiments using Pt/Fe 70 Cu 30 devices, we conclude that the enhancement of the LSSE voltage in the Pt/Fe 70 Cu 30 /BiYIG devices is attributed to the improvement of the spin-mixing conductance at the Pt/BiYIG interfaces.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
    Electronic Resource
    Electronic Resource
    Theoretical study on the outer- and inner-valence ionization spectra of H2O, H2S and H2Se using the SAC-CI general-R method (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 8990-8999 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The outer- and inner-valence ionization spectra of the Group VI hydrides H2O, H2S and H2Se below the double-ionization threshold were studied by the SAC-CI (symmetry-adapted-cluster configuration-interaction) general-R method. The SAC-CI method quite accurately reproduced the experimental spectra of these hydrides and gave detailed characterizations of the shake-up states. Several unknown satellite peaks were predicted. The shake-up state which includes excitations to the Rydberg orbitals was found to be very important for describing the satellite peaks of these hydrides. A detailed inner-valence satellite spectrum of H2Se is theoretically proposed prior to any experimental observation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367372
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  • 4
    Electronic Resource
    Electronic Resource
    Development of domain refined grain-oriented silicon steel by grooving : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6609-6611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently a heat-proof magnetic domain refining technique has been developed which is characterized by the introduction of grooves on a surface of steel sheet after final cold rolling. In this paper, magnetic properties and the domain refining effect of grooving are investigated. A grooving process is constituted by resist printing on the surface of steel sheets after final cold rolling and succeeding electrolytic etching. The grooves were introduced almost perpendicular to the rolling direction of steel sheets. The width and depth of each grove are about 200 and 20 μm, respectively. With this newly developed method, about 10% reduction in iron loss was achieved and less than 0.34 W/lb at 1.5 T, 60 Hz was obtained. Using this new material, the iron loss of wound core transformers can be reduced by about 10% as compared with nongrooved material. Domain width was dramatically reduced by grooving, which caused the reduction of eddy current loss. This reduction is considered to be caused by the demagnetizing field effect due to free poles in the vicinity of grooves. It was clarified that in grooved sheets the magnetization on the ungrooved surfaces proceeded faster than on the grooved surfaces and therefore, hysteresis loss and magnetizing characteristics did not deteriorate by grooving.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352526
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of adsorbed noble gas atoms on vibrational relaxation of hydroxyl group in zeolite (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 279-288 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: By means of tunable infrared pump–probe experiment, vibrational relaxation rates (v=1→0) of OH stretching mode of Brønsted acidic hydroxyl groups in a mordenite zeolite, which were interacting with noble gases (He, Ar, Kr, or Xe), were measured. The population lifetime, T1, decreased with the increase of the interaction with noble gases, e.g., 170 ps and 58 ps for isolated hydroxyl groups and ones interacting with Xe, respectively. Using a simple linear chain model, the mechanism for the enhancement of the relaxation rate was studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471873
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  • 6
    Electronic Resource
    Electronic Resource
    Transient absorption spectra of vibrationally excited OH/OD groups in mordenite zeolites: Effect of Xe adsorption (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 6665-6672 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Transient spectra following the v=1←0 excitation of the OH stretching mode of Brønsted acidic hydroxyl groups in normal and deuterated mordenite zeolites have been measured by a two-color picosecond pump–probe technique. When the OH and OD stretching bands were excited by resonant IR pulses, transient bleaching of the fundamental band (v=1←0) and the transient hot band (v=2←1) absorption signal were observed. For the OH and OD groups free of adsorbates, the spectral widths of the pump-induced signals were broadened by ∼4 cm−1 due to pure dephasing from the convoluted width of the pump and probe IR pulses. When the OH and OD groups were adsorbed by a Xe atom, the frequencies of the ν(OH) and ν(OD) bands shifted to lower frequency and at the same time the widths of both the transient bleaching and the transient hot band absorption were much broader than those of the isolated hydroxyl groups by the factor of more than three. Actually, the widths of the transient signals were about the same as those of the linear absorption signals. An adiabatic approximation has been employed to interpret the observed broadening/shift of the IR bands by making use of the results of DFT (density functional theory) calculations performed on a model cluster consisting of a Xe atom and an H3Si–(OH)–AlH3 substrate. The result agreed well with the observed spectral features. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471849
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  • 7
    Electronic Resource
    Electronic Resource
    Surface dynamics studied by perturbing the surface with the tip of a scanning tunneling microscope—Si(100) at 80 K (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have utilized the tip of a scanning tunneling microscope to perturb a specific local structure (the C defect) of Si(100) at 80 K, and observed the dynamical symmetric(if and only if)buckled transition of the surrounding dimers. The observed large-scale transition implies that the configuration of the dimers is determined by a detailed balance among many elastic long-range forces generated by the surrounding C defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121716
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  • 8
    Electronic Resource
    Electronic Resource
    Texture, microstructure, and magnetic properties of Fe-Co alloy films formed by sputtering at an oblique angle of incidence (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5124-5128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study was made of the structure and magnetic properties of Fe-Co alloy films produced by dc magnetron sputtering at an oblique angle of incidence. The films obtained in this manner showed uniaxial magnetic anisotropy in the film plane, with an easy axis of magnetization perpendicular to the incident direction of the sputtered particles. The anisotropy field increased with increasing sputtering gas pressure and with increasing Co content at high pressures. The structure of the film surfaces also changed with sputtering Ar gas pressure, and elongated grains were observed in the intermediate Ar pressure range. The texture was essentially isotropic in the film plane over the whole pressure range. It is suggested that the observed uniaxial anisotropy was due mainly to a magnetoelastic effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354299
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  • 9
    Electronic Resource
    Electronic Resource
    Metal-oxide semiconductor transistors fabricated on Si/Al2O3/Si structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8408-8410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated by polycrystalline-Si gate process on double heteroepitaxially grown Si(100)/Al2O3(100)/Si(100) structures in order to characterize the Si on insulator (SOI) structures. To realize the SOI structures, at first, the epitaxial Al2O3(100) film was grown on a 2-in. Si(100) wafer, and then, Si epitaxial film was grown on the Al2O3/Si by the chemical vapor deposition method. The SOI wafers were able to be handled in the same way as Si wafers during the device fabrication process. From ID-VD and ID-VG properties of the MOSFET, the transistor action was confirmed, and the threshold voltage of 0.4 V and the effective mobility of 540 cm2/V s at VG − VT = 4.0 V were obtained. The epitaxial Si layer was p-type, and the impurity concentration was considered to be 5×1015 cm−3. These results were very similar to those obtained from Si on sapphire epitaxial films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347407
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  • 10
    Electronic Resource
    Electronic Resource
    Deposition of a Si monolayer on sapphire using an ArF excimer laser for Si epitaxial growth (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2087-2091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si monolayer deposition on sapphire substrates was investigated by in situ x-ray photoelectron spectroscopy (XPS). Si deposition was carried out using direct photolysis of Si2H6 by irradiation of 193 nm ArF excimer laser light (1–2 W/cm2 , 70 Hz) at room temperature in a high-vacuum chamber. At first, decomposed Si atoms bound strongly with O atoms on sapphire until the entire sapphire surface was covered, then SiSi bonds were formed. From the growth mode analysis of the early stage of Si deposition, it can be seen that the growth mode of the deposited layer is a layer-by-layer mode (the Frank–Van der Merwe-type growth). The thickness of the deposited Si layers can be controlled on an atomic scale. As these features are suitable for Si-on-sapphire (SOS) epitaxial growth with predeposited layers, SOS epitaxial growth was demonstrated and the SOS films were characterized by replica electron microscopy and fabricating a metal-oxide-semiconductor field-effect transistor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341717
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