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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 82-84 (Nov. 2001), p. 291-296 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Progress In Crystal Growth And Characterization 15 (1987), S. 97-134 
    ISSN: 0146-3535
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 32 (1992), S. 366-371 
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 109-114 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative in-depth distribution of the elements contained in silicon-rich oxide thin films deposited on single-crystal silicon by low temperature plasma-assisted deposition has been performed by a combination of various MeV ion beam techniques. The quantity of oxygen and nitrogen has been measured by nuclear reactions, the silicon content has been determined by Rutherford backscattering, and elastic recoil detection was used for hydrogen. All the samples contain not only Si and O, but also N and H, which are residuals from the reactions involved in the deposition process. We did find that the MeV beam used in the nuclear techniques can induce a process of hydrogen desorption, which causes the measured H content to be a function of the He dose received by the sample. This phenomenon, not previously reported, must be taken into account to give the correct H content. The study of the kinetics of the He-induced hydrogen desorption has been used to correct the experimental data and to determine the original hydrogen content. The correction factor is in most of the cases close to 2 and outside any experimental error. Moreover the studies of the kinetics give information on the kinds of hydrogen complexes contained in the films. The results suggest that, on the basis of the strength of the binding energies, hydrogen is present in at least two different configurations, weakly and strongly bonded. In the first configuration hydrogen is easily desorbed either under the action of the ion beam or of the heat treatment at 600 °C, in the second, hydrogen is lost only after treatment at 900 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3528-3533 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the solid phase epitaxial growth from amorphous phase of a strained GexSi1−x thin layer made by 74Ge+ ion implantation of (100) Si is presented. Ge peak concentration is 6.4 at. %. Principally employed techniques are time-resolved reflectivity for crystallization rate measurements and cross sectional transmission electron microscopy (TEM) for interface morphology imaging. The kinetics is heavily affected by the mismatch stress induced by the Ge; the experimental data cannot however be explained considering only the average stress along the amorphous-crystal interface and another mechanism is required. Cross sectional TEM observations of partially crystallized samples reveal the tendency of the interface to roughen with an evolution reflected in the crystallization activation energy. Such roughness is assumed to affect the kinetics by locally enhancing the interface stress. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2644-2649 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid-phase epitaxial growth was studied in germanium-implanted 〈100〉 silicon wafers as a function of germanium fluence, annealing temperature, and time. MeV He Rutherford backscattering in channeling conditions, cross-sectional transmission electron microscopy, double-crystal x-ray diffraction, and secondary-ion mass spectroscopy techniques were used to characterize the samples. At low fluences, up to 1×1015 cm−2 at 130 keV, the crystallization kinetics is similar to that measured on self-amorphized silicon. In the high-dose samples, prepared by multiple implants with a total dose of 3.12×1016 cm−2, the growth rate at fixed temperatures decreases. A comparison with literature data, obtained by similar experiments performed on amorphized uniform GexSi100−x films prepared by molecular-beam epitaxy or chemical-vapor deposition, reveals that the concentration gradient, unavoidable in implanted samples mainly at the end of the ion range region, is strictly connected with the observed decrease.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 310-317 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Four different Co-silicide compounds were obtained by solid-state reaction at 800 °C in thin bilayers of amorphous silicon and cobalt evaporated on SiO2 substrates. Rutherford backscattering spectroscopy (2 MeV 4He+), x-ray diffraction, and Auger electron spectroscopy were used to obtain information about the chemical and crystallographic characteristics of the samples. Results indicate that in each sample only one of the following phases is present: CoSi2, CoSi, Co2Si, and Co4Si, the latter identified on the basis of the stoichiometric ratio only. Electrical resistivity and Hall effect measurements on van der Pauw structures were carried out as a function of the temperature in the intervals: 10–1000 and 10–300 K, respectively. At room temperature the resistivity ranges from the value 19 μΩ cm for CoSi2 to the value 142 μΩ cm for CoSi. There are some analogies with the case of a classical metal, but remarkable differences are also detectable in the resistivity versus temperature behavior and in the order of magnitude of the resistivity and of the Hall coefficient. In particular, at T〉300 K the resistivity of the CoSi2 samples linearly depends on temperature and is well fitted by the classical Bloch–Grüneisen expression. The other silicides show, in the same temperature range, a deviation from linearity (d2ρ/dT2〈0), while a quasi saturation of the resistivity can be extrapolated at higher temperatures. This saturation phenomenon can be described by the parallel of an ideal conductivity and of a saturation conductivity, and associated with the electron mean free path approaching interatomic distances. A similar model already has been put forth to describe the saturation of the resistivity in systems, such as A-15 superconducting compounds, characterized by a high value of the room-temperature resistivity. The transport parameters, deduced in a free electron framework from the resistivity curves of the Co silicides, show values which are consistent with the proposed model. Hall coefficient versus temperature behavior indicates that between 10 and 300 K a multicarrier effect is present. Conduction is predominantly n type in CoSi and p type in the other silicides.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 264-267 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current effects in heavy arsenic implants into silicon protected by a SiO2 layer were studied by Rutherford backscattering, spectrometry, differential sheet resistivity and Hall mobility measurements, Auger electron spectrometry, and transmission electron microscopy. It was found that oxygen atoms recoiled into silicon by the impinging arsenic ions affect the solid-phase epitaxial regrowth during the low-temperature ((approximately-equal-to)500 °C) postimplant anneal. A complete stopping in the regrowth was noticed in samples implanted at 1016 cm−2 at low current and annealed at 500 °C. These results show that the procedure suggested to obtain high-quality implanted layers, i.e., (1) formation of an amorphous layer with implants at low temperature and (2) solid-phase epitaxy at about 500 °C, is not suitable for implants through a SiO2 layer.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1085-1093 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical resistivity in the temperature range of 2–1100 K and Hall-effect measurements from 10 to 300 K of CoSi2, MoSi2, TaSi2, TiSi2, and WSi2 polycrystalline thin films were studied. Structure, composition, and impurities in these films were investigated by a combination of techniques of Rutherford backscattering spectroscopy, x-ray diffraction, transmission electron microscopy, and Auger electron spectroscopy. These silicides are metallic, yet there is a remarkable difference in their residual resistivity values and in their temperature dependence of the intrinsic resistivities. For CoSi2, MoSi2, and TiSi2, the phonon contribution to the resistivity was found to be linear in temperature above 300 K. At high temperatures, while a negative deviation from the linearity followed by a quasisaturation was observed for TaSi2, the resistivity data of WSi2 showed a positive deviation from linearity. It is unique that the residual resistivity, ρ(2 K), of the WSi2 films is quite high, yet the temperature dependent part, i.e., ρ(293 K) − ρ(2 K), is the smallest among the five silicides investigated. This suggests that the room-temperature resistivity of WSi2 can be greatly reduced by improving the quality of the film, and we have achieved this by using rapid thermal annealing.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7045-7049 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced in crystalline silicon by Ge-ion implantation at 130 keV is studied as a function of fluence. Rutherford backscattering measurements in channeling configuration and reflectivity measurements in the 1.5–6.5 eV energy range are presented and discussed. The results obtained by both techniques are in agreement on the determination of the amorphization threshold. The dielectric functions, obtained by the Kramers–Kronig analysis and checked through ellipsometric measurements at one selected wavelength, are well reproduced by finite sets of classical harmonic oscillators. It is possible to describe the behavior of the oscillator parameters through analytical functions of a single variable related to the amount of damage. In a representative case, the damage depth profile is obtained after the removal of controlled amounts of silicon by anodic oxidation, and good agreement is found with the Rutherford backscattering results.
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