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  • Polymer and Materials Science  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 765-772 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In this paper we report some results obtained in the analysis of multilayer samples employed in VLSI and ULSI microelectronic technology by means of hot electron gas SNMS (sputtered neutral mass spectrometry) and MCs+ SIMS.A direct comparison of molecular ion SIMS with a post-ionization technique pushed to its limits is presented.A discussion in terms of dynamic range, optimum sensitivity and depth resolution is given.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 13 (1988), S. 202-208 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The apparent width of the SiO2—Si interface was evaluated with Auger electron spectrometry, secondary ions mass spectrometry and transmission electron microscopy for thin silicon dioxide films grown at temperature ranging from 900 to 1100°C, both on single- and poly-crystalline silicon (polysilicon), with the aim of finding the meaning of this kind of measurement for this particular system. The width of the transition between SiO2 and polysilicon was found to depend on both the oxidation temperature and polysilicon doping method, being lower for ion implanted than for gas phase (POCl3) doped samples and for oxides grown at higher temperature. The possible causes for the differences in the interface width are discussed and attributed, in the present case, to the oxide thickness non-uniformity. This is due, in turn, to the lower oxide growth rate, particularly for the lower oxidation temperature, on the silicon grains protruding out of the surface.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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