Publication Date:
2011-06-10
Description:
Author(s): Aoife B. Kehoe, David O. Scanlon, and Graeme W. Watson The ground state electronic structure of thallic oxide has been a source of controversy in the literature, with Tl 2 O 3 reported to be either a degenerate n -type semiconductor or an intrinsic semimetal with no band gap. Using a screened hybrid density functional theory (DFT) approach, we show that Tl 2 ... [Phys. Rev. B 83, 233202] Published Thu Jun 09, 2011
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics