Publication Date:
2018-11-27
Description:
Author(s): R. J. S. Abraham, A. DeAbreu, K. J. Morse, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, S. Simmons, and M. L. W. Thewalt We use the greatly improved optical linewidths provided by highly enriched Si 28 to study a photoluminescence line near 1017 meV previously observed in the luminescence spectrum of natural Si diffused with Mg and suggested to result from the recombination of an isoelectronic bound exciton localized at... [Phys. Rev. B 98, 205203] Published Mon Nov 26, 2018
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics