Publication Date:
2015-08-04
Description:
The current-perpendicular-to-plane giant magnetoresistance (MR) devices with full-Heulser Co 2 MnAl (CMA) electrodes and a Ag spacer have been simulated to investigate the relationship between the transport properties and the structural disordering of electrodes by performing first-principles electronic structure and ballistic transport calculations. The CMA electrode has nearly negligible interfacial roughness in both L 2 1 and B 2-types. The transmission coefficient is found strongly dependent on the structures of the trilayers for different structural CMA electrodes. High majority-spin electron conductance in the magnetization parallel configuration turns up in the entire -plane and the MR ratio reaches as high as over 90% for the B 2-based CMA/Ag/CMA magnetic trilayers. In contrast, the L 2 1 -based one has ∼60% MR ratio resulting from much lower bulk spin-asymmetry coefficient ( β ), which might be caused by the vibrational spin-polarization in each atomic layer adjacent to the interfaces in the corresponding model. The patterns of indicates that B 2-based CMA/Ag/CMA magnetic trilayers are promising giant magnetoresistance junctions with high performance. T σ ( E , k → / / ) k → T σ ( E , k → / / )
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
