Publication Date:
2013-09-13
Description:
M. Vyshnepolsky, C. Klein, F. Klasing, A. Hanisch-Blicharski, and M. Horn-von Hoegen Using spot profile analysis low energy electron diffraction, we studied the growth mode and strain state of ultra-thin epitaxial BiSe(111) films grown by molecular beam epitaxy on Si(111). The first layer grows as complete quintuple layer and covers the Si substrate before the next layer nucleates. ... [Appl. Phys. Lett. 103, 111909 (2013)] published Thu Sep 12, 2013.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics