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Plasma deposited hydrogenated carbon on GaAs and InP (1985)

Lanford, W. A. ; Alterovitz, S. A. ; Warner, J. D. ; [et al.]

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Publication Date: 2011-08-19

Description: The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.

Keywords: SOLID-STATE PHYSICS

Type: Journal of Vacuum Science and Technology A (ISSN 0734-2101); 3; 900-903

Format: text

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