ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Chemical mechanical polishing (CMP) is a widely used technique to achieve high level ofglobal and local planarity required in modern integrate circuit (IC) industries and hard diskmanufacturing process, etc., which pleas for concentrate researches. The main purpose of the presentresearch is in an attempt to express the counterintuitive experimental aftermath: the ‘negative’pressure, i.e., a suction force occurred in conventional commercial CMP process. A preliminary twotiers wafer-scale flow model for CMP is presented considering the roughness as well as the elasticityof the bulk pad substrate. Numerical simulations were conducted to elucidate the contact pressure andflow pressure distributions. The results show that a divergence region appears near the leading edge,which contributes to the suction pressure. A stress-richened area near the edges will give rise to overpolishing. The research aftermaths agree well with the experiments, that validate the proposedanalysis to some extend. This will shed lights on the mechanism of CMP process, which for a longtime is considered as a black art where empirical or semi-empirical data are dependent upon tooptimize the CMP parameters
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.353-358.737.pdf
