ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The single crystal of Si is still one of the most important candidates among other materialsincluding Single crystals of SiC, GaN, C(diamond) or compound semiconductors. The innovativeprocess as called CMG(Chemo-Mechanical-Grinding) for Si wafer has been recently developedwhich is different from conventional CMP(Chemo-Mechanical-Polishing ) process. The CMGprocess can be done under dry conditions using CeO2 based solid bulk abrasives. The microstructuresfor surface and subsurface of Si single crystal after CMG process were analyzed using TEM/EDX,AFM, MFP-3D Microscope. The mechanism of CMG process was also investigated by X-raydiffraction and ICP chemical analysis using products by chemical reaction between Si and CeO2abrasives. The results showed that Si single crystal after CMG had, 1) no defects even Si lattice revelor mechanical imperfections,2) better surface roughness as compared to CMP process. The CMGmechanism concluded that CeO2 reacted with Si producing Ce-Si-O amorphous phase
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.329.367.pdf
