ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report the damage-free planarization of 4H-SiC (0001) wafers using a newplanarization technique we named CAtalyst-Referred Etching (CARE). The CARE setup equippedwith a polishing pad made of a catalyst is almost the same as a lapping setup. Since the catalystgenerates reactive species that activate only when they are next to the catalyst surface, SiC can bechemically removed in contact with the catalyst surface with a pressure noticeably lower than that ina conventional polishing process. The processed surfaces were observed by optical interferometryand AFM. These observations presented a marked reduction in surface roughness. A step-terracestructure was observed with a step height of approximately 3み, corresponding to one-bilayerthickness of Si and C, in the AFM images. To estimate the crystallographic properties of theCARE-processed surface, the surfaces were observed by cross-sectional TEM. The TEM imagesshowed that a more crystallographically well-ordered surface was realized in comparison with theconventional CMP-processed surface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.749.pdf
