Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 2098-2101
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Direct writing of micron-sized features in self-developing photoresists is demonstrated using less than 1 mW of cw ultraviolet light at 257 nm. No energy density or intensity thresholds for ablation are observed. Ablation depth depends only on the deposited energy density and is independent of the rate of deposition; that is, the self-developing process is reciprocal. We have determined that an environment containing oxygen is necessary for complete self-developing; in the absence of O2 the process is self-limiting. Patterns created in poly(methyl methacrylate) have been faithfully reproduced into silicon substrates using reactive-ion etching.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335973
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