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Centers at junction boundaries in AlGaAs single heterojunction red light-emitting diodes (1986)

Calleja, E. ; Muñoz, E ; Gomez, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 2235-2243

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: In AlGaAs red light-emitting diodes fabricated by liquid-phase epitaxy the presence and characteristics of deep centers located near the injecting-active junction boundaries have been studied. Transient capacitance, DLTS, photocapacitance, and photocurrent techniques have been applied. Besides the presence, in the n-type injecting layer, of centers related to the Te dopant (DX defects), deep hole traps have been detected at both sides of the n-p heterojunction. The physical origin of such hole traps, present in moderately large concentrations, is discussed in terms of Zn-related complexes. This defect pattern allows us to explain the thermal- and photocapacitance, and the freeze-out and photocurrent characteristics found in such devices.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336365

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