Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 1010-1016
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The time-resolved luminescence spectra from excited conduction subbands in three samples of multi-quantum-well GaAs/AlxGa1−xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high-density excitations by a 30-ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time-resolved spectrum to the observed, and the time-dependent electron energy was obtained by using these parameters. The energy-loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron-polar phonon scattering, including the screening effect due to the high carrier density.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339757
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