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Pressure dependence of the nonradiative lifetime in GaAs/AlGaAs double-heterostructure lasers (1987)

Heasman, K. C. ; Blood, P. ; Adams, A. R. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 62 (1987), S. 3448-3450

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured the linear losses in a GaAs/AlGaAs double-heterostructure laser as a function of applied hydrostatic pressure. The nonradiative lifetime increases by a factor 2.5 from zero to 7.6 kbar, and if this is due to recombination via a deep state, then the rate-limiting capture cross section decreases with pressure, suggesting capture by multiphonon emission. We find that it is necessary to postulate the existence of other nonlinear losses at threshold to account for the increase in threshold current with pressure measured on the same structure. Carrier transfer to higher conduction-band minima in the active or cladding regions are suggested as possible mechanisms.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.339313

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