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Device applications of vanadium-doped silicon-dioxide (1989)

DeLima, J. J. ; Snell, A. J. ; Krishna, K. V. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 4082-4084

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: This study has been undertaken in an attempt to investigate the possible applications of transition-metal-doped amorphous silicon-dioxide in floating-gate avalanche-metal/silicon-dioxide/silicon-type nonvolatile memories, with the objective of developing an electrically erasable programmable read-only memory structure with low WRITE and ERASE voltages, (e.g., (approximately-equal-to)5 V) which does not depend for its operation on the very thin tunneling oxides (i.e., ≤80 A(ring)) currently used and which are a major source of device instability and degradation. Results are presented for 200-A(ring)-thick vanadium-doped silicon-dioxide films which show reproducible current-voltage characteristics at much reduced voltages compared with conventional thin thermal oxides.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343340

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