ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
For heteroepitaxial systems, such as silicon on sapphire, microtwins can usually be observed in the epitaxial layer. It has also been suggested that microtwins play a significant role in strain relief in these systems. From a knowledge of the differential volume fraction of microtwins occurring in a heteroepitaxial systems, it is possible to estimate the greatest possible strain relief due to microtwins. Measurements of the differential volume fraction of microtwins in silicon-on-sapphire, however, indicate that the strain relief due to microtwins cannot be greater than 0.7%, even though the lattice mismatch between silicon and sapphire is an order of magnitude larger. Therefore, if the silicon/sapphire interface is coherent, the misfit strain must be relieved by another mechanism.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345036
