Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 5109-5114
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We derive an expression for the dislocation line tension in thin-film structures for double-kink (dislocation dipole) extension of a threading dislocation. From these calculations, we conclude, that for a double kink that is a distance of more than three times the vertical dipole separation from the free surface, the effect of the free surface on the double-kink line tension is insignificant. We consider the specific case of a double-kink bounding a 60-nm-thick Si0.7Ge0.3 strained layer grown on a silicon substrate and buried under a silicon cap. For this specific configuration, line tension is seen to increase with cap thickness (which is equivalent to distance of the double kink from the surface) only up to a cap thickness of 100 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347048
|
Location |
Call Number |
Expected |
Availability |
