ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

A thyristor model of switching in metal-thin insulator-semiconductor-semiconductor devices: The influence of insulating layer and illumination (1990)

Choi, W. K. ; Owen, A. E.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 6447-6452

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The influence of the insulating layer and illumination on the threshold switching voltage (Vs) of metal-thin insulator-semiconductor-semiconductor (MISS) devices has been modeled using the phenomenological approach we developed previously. [J. Appl. Phys. 65, 2102 (1989)]. The influence of the thin insulating layer on Vs has been examined by investigating the influence of the effective barrier heights of the insulating layer on the current amplification factor of the metal-thin insulator-semiconductor part of the model. The influence of illumination is modeled in a similar way to the effect of base current injection in three-terminal devices; the base current is replaced by the photocurrent generated as a result of illumination. Our model provides good agreement for MISS devices with silicon oxide insulating layers and illumination of fixed wavelength.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.346842

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit