ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the magnetic field dependence of the tunneling current in GaAs/AlAs double barrier structures. We report new results, periodic with the inverse of the magnetic field, on a weak feature on the rising side of the main resonant tunneling peak. This feature is attributed to resonant tunneling from a lightly doped contact region interacting with the quasi-two-dimensional state in the accumulation layer. A qualitative interpretation is given.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346227